發(fā)布時(shí)間：2018-05-03 02:02

  本文選題：CVD + 硅納米線��； 參考：《天津理工大學(xué)》2017年碩士論文

【摘要】：本文以硅納米線及鎂鋁尖晶石一維納米結(jié)構(gòu)材料作為研究對(duì)象,系統(tǒng)地研究了采用化學(xué)氣相沉積(CVD)技術(shù)制備一維納米結(jié)構(gòu)的生長條件、生長機(jī)制及形態(tài)控制方法等,并探索了這些一維納米材料在電化學(xué)領(lǐng)域中的應(yīng)用。首先,本文采用直流電弧等離子體噴射CVD技術(shù)制備硅納米線。硅片作為襯底及硅源,鎳作為催化劑,在氫/氬高溫等離子體的作用下,成功制備了硅納米線。研究結(jié)果表明,硅納米結(jié)構(gòu)的形態(tài)及尺寸主要依賴生長溫度及生長時(shí)間,當(dāng)生長溫度達(dá)到900℃,生長時(shí)間達(dá)到15 min時(shí),會(huì)形成直徑約50 nm、長度可達(dá)幾十微米的硅納米線。另外,先對(duì)硅基片進(jìn)行堿刻蝕后,不僅可以橫向生長硅納米線,甚至可以形成圖案,該方法在圖案化技術(shù)中具有應(yīng)用潛力。其次,本文仍然采用直流電弧等離子體噴射CVD技術(shù),鋁片為襯底及鋁源,硝酸鎂及硝酸摮作為鎂的來源及鎳催化劑前驅(qū)物,制備了鎂鋁尖晶石一維納米材料。通過調(diào)整氣體流量、電源功率、催化劑前驅(qū)物的含量等工藝條件,成功制備出了不同形態(tài)的鎂鋁尖晶石納米結(jié)構(gòu)。測試表明,這些鎂鋁尖晶石納米結(jié)構(gòu)具有Mg_(0.36)Al_(2.44)O_4分子式,是一種一維的線狀或帶狀納米材料。用CVD技術(shù)制備鎂鋁尖晶石在中外文獻(xiàn)中鮮有報(bào)道,是一種新穎的制備鎂鋁尖晶石工藝。最后,采用電沉積技術(shù)將Mg_(0.36)Al_(2.44)O_4修飾到GCE上,構(gòu)建Mg_(0.36)Al_(2.44)O_4/GCE傳感電極,探索鎂鋁尖晶石在電化學(xué)傳感器方面的應(yīng)用。使用Mg_(0.36)Al_(2.44)O_4/GCE傳感電極構(gòu)建電化學(xué)傳感體系,用于檢測對(duì)苯二酚(HQ)、鄰苯二酚(CC)、間苯二酚(RC)等三種苯二酚(C6H4(OH)2)異構(gòu)體。通過調(diào)節(jié)優(yōu)化支持電解液的離子強(qiáng)度和pH值等檢測參數(shù),實(shí)現(xiàn)了對(duì)苯二酚三種異構(gòu)體的同步檢測。實(shí)驗(yàn)表明,電沉積時(shí)間為10 min的Mg_(0.36)Al_(2.44)O_4/GCE傳感電極分辨能力最強(qiáng)。Mg_(0.36)Al_(2.44)O_4/GCE傳感電極用于檢測苯二酚的三種異構(gòu)體時(shí),具有檢測限低、選擇性高、分辨力強(qiáng)以及抗干擾能力強(qiáng)等優(yōu)點(diǎn),于是基于Mg_(0.36)Al_(2.44)O_4/GCE的電化學(xué)檢測方法具有廣闊的應(yīng)用前景。
[Abstract]:In this paper, the growth conditions, growth mechanism and morphology control methods of one-dimensional nanostructures prepared by chemical vapor deposition (CVD) technique were systematically studied with silicon nanowires and magnesia-aluminum spinel one-dimensional nanostructures as research objects. The application of these one-dimensional nanomaterials in electrochemical field was also explored. Firstly, silicon nanowires were prepared by DC arc plasma jet CVD technique. Silicon nanowires were successfully prepared by hydrogen / argon high temperature plasma using silicon wafer as substrate and silicon source and nickel as catalyst. The results show that the morphology and size of silicon nanostructures mainly depend on the growth temperature and growth time. When the growth temperature reaches 900 鈩，

本文編號(hào)：1836464