發(fā)布時間：2018-06-24 05:14

  本文選題：太赫茲探測器 + PVDF薄膜　； 參考：《電子科技大學》2015年碩士論文

【摘要】：聚偏氟乙烯(PVDF)是一種優(yōu)秀的聚合物熱釋電材料,PVDF薄膜型的熱釋電探測器具有性價比高、體積小的優(yōu)點,且制備工藝簡單、可進行大規(guī)模生產(chǎn)。這使PVDF材料成為商用及軍用的熱門材料制備熱釋電探測器。本文對PVDF薄膜型太赫茲熱釋電單元器件的研究,采用旋涂法制備PVDF薄膜,并針對其熱釋電系數(shù)較小的缺點,提出一種摻雜Mg(NO3)2.6H2O的新方法提高PVDF薄膜β晶相的含量,從而得到高熱釋電性能的PVDF薄膜,同時測試了PVDF薄膜和Mg(NO3)2.6H2O復(fù)合薄膜的介電、鐵電、熱釋電性能,并制備出單元器件,搭建測試平臺,測試單元器件性能。研究PVDF薄膜制備工藝及介電、鐵電、熱釋電性能。研究不同溶劑對薄膜紅外光譜的影響,退火工藝對PVDF薄膜表面形貌的影響,不同襯底材料(Al和FTO)和測試溫度對PVDF薄膜介電、漏電性能的影響。測試了極化后PVDF薄膜的電滯回線、漏電流和熱釋電系數(shù)。測試得到PVDF的漏電流為1.5×10-8A、剩余極化強度Pr=0.65μC/cm2、矯頑電場Ec=39v/μm、熱釋電系數(shù)p=8.7×10-10C/Kcm2。通過溶液法得到PVDF薄膜僅含有少量的β晶相,具有較低的熱釋電性能,本文提出一種摻雜Mg(NO3)2.6H2O的新方法,得到具有高β晶相的PVDF/Mg(NO3)2.6H2O復(fù)合薄膜,并對其表面形貌、紅外光譜、介電、漏電、鐵電、熱釋電性能進行研究。測試得到在1KHz條件下PVDF/Mg(NO3)2.6H2O復(fù)合薄膜的相對介電常數(shù)為10.8、介電損耗為0.05、漏電流為-1.28×10-10A、剩余極化強度Pr=1.22μC/cm2、矯頑電場Ec=50v/μm、熱釋電系數(shù)p=6.3×10-9 C?cm-2?K-1,計算出電壓響應(yīng)優(yōu)值Fv=2.3×10-10C?cm?J-1、探測優(yōu)值Fd=4.3×10-9C?cm?J-1。通過本實驗制備的PVDF/Mg(NO3)2.6H2O復(fù)合材料具有優(yōu)秀的熱釋電性能。研究PVDF薄膜的太赫茲熱釋電探測單元的制備工藝,制備出平面的結(jié)構(gòu)的PVDF熱釋電單元探測器。并根據(jù)實驗室條件自行搭建的太赫茲測試系統(tǒng)分別對PVDF薄膜和PVDF/Mg(NO3)2.6H2O薄膜的熱釋電單元探測器進行測試。
[Abstract]:Polyvinylidene fluoride (PVDF) is an excellent polymer pyroelectric material PVDF thin film pyroelectric detector has the advantages of high cost performance small volume and simple preparation process can be large-scale production. This makes PVDF materials become a hot material for commercial and military applications to prepare pyroelectric detectors. In this paper, a novel method of doping mg (no _ 3) _ 2 路6H _ 2O into PVDF thin films is proposed to increase the 尾 -phase content of PVDF films. The PVDF thin films are prepared by spin coating method. The pyroelectric coefficient of PVDF thin films is small, and a new method of doping mg (no _ 3) _ (2. 6H _ 2O) is put forward to improve the 尾 -phase content of PVDF films. The dielectric, ferroelectric and pyroelectric properties of PVDF film and mg (no 3) 2.6H 2O composite film were measured. The preparation process and dielectric, ferroelectric and pyroelectric properties of PVDF films were studied. The effects of different solvents on the infrared spectra of PVDF films, the effects of annealing process on the surface morphology of PVDF films, and the effects of different substrate materials (Al and FTO) and testing temperature on the dielectric and leakage properties of PVDF films were studied. The hysteresis loop leakage current and pyroelectric coefficient of polarized PVDF films were measured. The results show that the leakage current of PVDF is 1.5 脳 10 ~ (-8) A, the residual polarization intensity is 0.65 渭 C / cm ~ (2), the coercive electric field is 39 v / 渭 m, and the pyroelectric coefficient (p _ (8.7) 脳 10 ~ (-10) C / m ~ (2). PVDF thin films have only a small amount of 尾 crystalline phase and have low pyroelectric properties. A new method of doping mg (no 3) 2.6H 2O is proposed in this paper. PVDF / mg (no 3) 2.6H 2O composite thin films with high 尾 crystalline phase are obtained. The surface morphology, infrared spectra, dielectric properties of PVDF / mg (No3) 2.6H2O composite thin films are obtained. Leakage, ferroelectricity, pyroelectric properties were studied. The relative dielectric constant, dielectric loss and leakage current of PVDF / mg (no _ 3) _ 2 路6H _ 2O composite films were 10.8, -1.28 脳 10 ~ (-10) A, -1.28 脳 10 ~ (-10) A, pr _ (1.22) 渭 C / cm ~ (2), EC ~ (50) V / 渭 m, and P6.3 脳 10 ~ (-9) C ~ (10 ~ (-9) C ~ (-2) C ~ (-2) K ~ (-1), respectively, at 1kHz. The optimal voltage response of PVDF / mg (no _ 3) _ 2 路6H _ 2O composite films was calculated. The optimum value of detection was 4.3 脳 10 ~ (-9) C ~ (-1) C ~ (-1) cm ~ (-1) ~ (-1). PVDF / mg (no _ 3) _ 2 路6H _ 2O composites prepared by this experiment have excellent pyroelectric properties. The preparation process of terahertz pyroelectric detector for PVDF thin films was studied and the planar structure PVDF pyroelectric unit detector was prepared. The pyroelectric unit detectors of PVDF films and PVDF / mg (No3) 2.6H2O thin films were tested by a terahertz test system based on laboratory conditions.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TB383.2

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本文編號：2060184