硫化鎢納米結(jié)構(gòu)制備及光學(xué)性質(zhì)研究
發(fā)布時間：2018-08-03 12:50
【摘要】：單層WS_2具有超薄的厚度、高載流子遷移率、低電阻率、高開關(guān)比等優(yōu)點,在光電子器件和谷極化器件等方面具有重要的應(yīng)用價值。大面積高質(zhì)量的單層薄膜是開發(fā)WS_2基光電器件的重要前提。本論文針對高質(zhì)量單層WS_2薄膜制備及其光學(xué)性質(zhì)進行研究,取得如下結(jié)果:(1)利用低熔點鎢源,以化學(xué)氣相沉積法在SiO2/Si襯底上獲得了高發(fā)光質(zhì)量的單層2H-WS_2三角片,其629.7 nm處發(fā)光峰半峰寬為18 nm(48 me V),且通過調(diào)節(jié)反應(yīng)物鎢源與硫源的比例可分別獲得整片均勻發(fā)光或僅邊緣發(fā)光的WS_2薄膜。(2)對照研究藍寶石和SiO_2/Si襯底對單層WS_2拉曼模式和發(fā)光位置的影響。發(fā)現(xiàn)兩種襯底對單層WS_2存在相同的應(yīng)力,但襯底表面不同的帶電雜質(zhì)摻雜使藍寶襯底的單層WS_2薄膜發(fā)光峰藍移。(3)采用濺射法制備WS_2/Au復(fù)合材料,單層WS_2及WS_2/Au復(fù)合材料光學(xué)性質(zhì)的對照分析發(fā)現(xiàn),直接向單層WS_2表面沉積Au顆粒會導(dǎo)致其發(fā)光猝滅,但可以增強層間A1g(Γ)模式的拉曼振動。
[Abstract]:Single layer WS_2 has the advantages of ultra-thin thickness, high carrier mobility, low resistivity and high switching ratio. It has important application value in optoelectronic devices and valley polarization devices. Large area and high quality monolayer film is an important prerequisite for the development of WS_2 based optoelectronic devices. In this paper, the preparation and optical properties of high quality monolayer WS_2 thin films are studied. The results are as follows: (1) monoluminescent 2H-WS_2 triangles with high luminescence quality are obtained on SiO2/Si substrate by chemical vapor deposition with low melting point tungsten source. The half-width of the luminescence peak at 629.7 nm is 18 nm (48 me V),). By adjusting the ratio of reactant tungsten source to sulfur source, we can obtain a single WS_2 thin film with uniform luminescence or edge-only luminescence, respectively. (2) the Raman spectra of single layer WS_2 on sapphire and SiO_2/Si substrates are studied. The effect of mode and luminous position. It is found that the two substrates have the same stress on the monolayer WS_2, but different charged impurity doping on the surface of the substrate results in the blue shift of the luminescence peak of the monolayer WS_2 films on the Lambo substrates. (3) the WS_2/Au composites are fabricated by sputtering. By comparing the optical properties of monolayer WS_2 and WS_2/Au composites, it is found that the deposition of au particles directly on the surface of monolayer WS_2 leads to the luminescence quenching of au particles, but it can enhance the Raman vibration of the interlaminar A1g (螕) mode.
【學(xué)位授予單位】：長春理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TQ136.13;TB383.2
本文編號：2161799
[Abstract]:Single layer WS_2 has the advantages of ultra-thin thickness, high carrier mobility, low resistivity and high switching ratio. It has important application value in optoelectronic devices and valley polarization devices. Large area and high quality monolayer film is an important prerequisite for the development of WS_2 based optoelectronic devices. In this paper, the preparation and optical properties of high quality monolayer WS_2 thin films are studied. The results are as follows: (1) monoluminescent 2H-WS_2 triangles with high luminescence quality are obtained on SiO2/Si substrate by chemical vapor deposition with low melting point tungsten source. The half-width of the luminescence peak at 629.7 nm is 18 nm (48 me V),). By adjusting the ratio of reactant tungsten source to sulfur source, we can obtain a single WS_2 thin film with uniform luminescence or edge-only luminescence, respectively. (2) the Raman spectra of single layer WS_2 on sapphire and SiO_2/Si substrates are studied. The effect of mode and luminous position. It is found that the two substrates have the same stress on the monolayer WS_2, but different charged impurity doping on the surface of the substrate results in the blue shift of the luminescence peak of the monolayer WS_2 films on the Lambo substrates. (3) the WS_2/Au composites are fabricated by sputtering. By comparing the optical properties of monolayer WS_2 and WS_2/Au composites, it is found that the deposition of au particles directly on the surface of monolayer WS_2 leads to the luminescence quenching of au particles, but it can enhance the Raman vibration of the interlaminar A1g (螕) mode.
【學(xué)位授予單位】：長春理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TQ136.13;TB383.2
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