發(fā)布時(shí)間：2018-08-07 12:03

【摘要】：為了利用磁控濺射技術(shù)制備多組元薄膜材料,并有效地調(diào)控薄膜組份,采用低頻與高頻組合、射頻與甚高頻組合驅(qū)動(dòng)的雙頻雙靶磁控濺射技術(shù)成為可能的途徑之一。但是,目前雙靶磁控濺射主要采用直流和射頻驅(qū)動(dòng)的雙靶、脈沖直流和射頻驅(qū)動(dòng)的雙靶或兩個(gè)相同射頻驅(qū)動(dòng)的雙靶共濺射技術(shù),缺乏更高頻率組合的雙頻磁控濺射技術(shù)。為了發(fā)展低頻與高頻組合、射頻與甚高頻組合驅(qū)動(dòng)的雙頻磁控濺射,本文采用2MHz、13.56 MHz、27.12 MHz和60 MHz功率源相互組合形成雙頻磁控濺射系統(tǒng),通過拒斥場(chǎng)能量分析技術(shù)和Langmuir探針技術(shù),研究了雙頻磁控濺射和ICP增強(qiáng)的雙頻磁控濺射等離子體特性。本文研究了2MHz/13.56(27.12、60)MHz、13.56MHz/27.12(60)MHz和27.12MHz/60MHz雙頻磁控濺射放電等離子體的離子能量分布特性。發(fā)現(xiàn)離子能量分布特性取決于低頻與高頻的功率比和驅(qū)動(dòng)頻率。對(duì)于2MHz/13.56(27.12、60)MHz的雙頻磁控濺射,增大低頻/高頻功率比可以導(dǎo)致離子能量分布從單模結(jié)構(gòu)朝著雙模結(jié)構(gòu)變化。對(duì)于13.56MHz/27.12(60)MHz和27.12MHz/60MHz的雙頻磁控濺射,增大低頻/高頻功率比則導(dǎo)致峰值能量的增大,利用低頻與高頻的功率比對(duì)鞘層振蕩的影響機(jī)制解釋了雙頻磁控濺射離子能量分布特性變化的可能原因。論文研究了13.56MHz/27.12(60)MHz和27.12MHz/60MHz雙頻磁控濺射放電等離子體的等離子體密度、電子溫度、等離子體電位和電子能量分布特性。發(fā)現(xiàn)不同頻率組合可以造成這些性能的差異,因此,通過選擇適當(dāng)?shù)念l率組合,可以調(diào)控雙頻磁控濺射的等離子體性能。論文進(jìn)一步研究了ICP增強(qiáng)的13.56MHz/27.12(60)MHz和27.12MHz/60MHz雙頻磁控濺射放電等離子體特性。發(fā)現(xiàn)ICP放電的增強(qiáng)作用與濺射頻率的組合有關(guān),需要選擇合適的頻率組合來改善等離子體性能。因此,發(fā)展低頻與高頻組合、射頻與甚高頻組合驅(qū)動(dòng)的雙頻磁控濺射技術(shù)對(duì)于薄膜沉積與結(jié)構(gòu)性能的調(diào)控提供了一種新的手段。
[Abstract]:In order to fabricate multicomponent thin films by magnetron sputtering and effectively control the composition of films, dual-frequency dual-target magnetron sputtering technology driven by combination of low frequency and high frequency, radio frequency and very high frequency is one of the possible ways. However, at present, dual-target magnetron sputtering mainly uses DC and RF driven dual-target, pulse DC and RF driven dual-target co-sputtering technology, and lack of high-frequency combination dual-frequency magnetron sputtering technology. In order to develop a dual-frequency magnetron sputtering system driven by a combination of low frequency and high frequency and a combination of radio frequency and very high frequency, a dual-frequency magnetron sputtering system was developed by combining the power sources of 2MHz 13.56MHz 27.12 MHz and 60 MHz. The rejection field energy analysis technique and the Langmuir probe technique were used. The plasma characteristics of dual frequency magnetron sputtering and ICP enhanced double frequency magnetron sputtering are studied. The ion energy distribution characteristics of 2MHz/13.56 (27.12 ~ 60) MHz / 13.56 MHz / 27.12 (60) MHz and 27.12MHz/60MHz dual-frequency magnetron sputtering discharge plasma have been studied. It is found that the distribution of ion energy depends on the power ratio and driving frequency of low frequency and high frequency. For the dual-frequency magnetron sputtering of 2MHz/13.56 (27.12 ~ (60) MHz), increasing the low frequency / high frequency power ratio can lead to the change of ion energy distribution from single mode structure to double mode structure. For the dual-frequency magnetron sputtering of 13.56MHz/27.12 _ (60) MHz and 27.12MHz/60MHz, the increase of low frequency / high frequency power ratio leads to the increase of peak energy. The influence of low frequency and high frequency power ratio on sheath oscillation is used to explain the variation of ion energy distribution in dual frequency magnetron sputtering. The plasma density, electron temperature, plasma potential and electron energy distribution of 13.56MHz/27.12 _ (60) MHz and 27.12MHz/60MHz dual-frequency magnetron sputtering discharge plasma are studied in this paper. It is found that different frequency combinations can cause these differences. Therefore, the plasma performance of dual-frequency magnetron sputtering can be controlled by choosing the appropriate frequency combination. The plasma characteristics of ICP enhanced 13.56MHz/27.12 (60) MHz and 27.12MHz/60MHz double frequency magnetron sputtering discharge are further investigated. It is found that the enhancement of ICP discharge is related to the sputtering frequency combination, and it is necessary to select a suitable frequency combination to improve the plasma performance. Therefore, the development of dual-frequency magnetron sputtering technology driven by combination of low frequency and high frequency, radio frequency and very high frequency provides a new means for controlling the deposition and structure properties of thin films.
【學(xué)位授予單位】：蘇州大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 倪瑞昌;;高生產(chǎn)能力的在線平面磁控濺射系統(tǒng)[J];玻璃;1988年03期

2 王德苗,孫禮本;磁控濺射塑料金屬化新工藝的研究[J];塑料工業(yè);1986年03期

3 揚(yáng);磁控濺射非晶態(tài)金屬涂層[J];兵器材料科學(xué)與工程;1987年03期

4 黃寧康;王明華;申勇;郭華聰;王賢恩;;磁控濺射司太立合金簿膜[J];電力技術(shù);1987年06期

5 徐凈人,滕鑫康;高溫超導(dǎo)體磁控濺射電極接點(diǎn)的研究[J];稀有金屬材料與工程;1991年03期

6 劉虎先;磁控濺射節(jié)能防窺鍍膜玻璃[J];中國(guó)建材;1993年03期

7 劉虎先;;磁控濺射節(jié)能防窺鍍膜玻璃在萊州問世[J];建材工業(yè)信息;1993年13期

8 徐政;俞曉正;蔡楚江;沈志剛;;空心微珠表面磁控濺射和化學(xué)鍍金屬膜的特性比較[J];過程工程學(xué)報(bào);2006年S2期

9 王福會(huì),樓翰一;影響磁控濺射不銹鋼粘附性的因素[J];材料科學(xué)進(jìn)展;1989年02期

10 黃建民;高瑞珍;;磁控濺射最佳工藝參數(shù)的研究[J];表面技術(shù);1989年04期

相關(guān)會(huì)議論文 前10條

1 梁愛鳳;楊化偉;王宇鋼;;磁控濺射與離子鍍技術(shù)在高分子核孔膜中的沉積形貌研究[A];2008年全國(guó)荷電粒子源、粒子束學(xué)術(shù)會(huì)議暨中國(guó)電工技術(shù)學(xué)會(huì)第十二屆電子束離子束學(xué)術(shù)年會(huì)、中國(guó)電子學(xué)會(huì)焊接專業(yè)委員會(huì)第九屆全國(guó)電子束焊接學(xué)術(shù)交流會(huì)、粒子加速器學(xué)會(huì)第十一屆全國(guó)離子源學(xué)術(shù)交流會(huì)、中國(guó)機(jī)械工程學(xué)會(huì)焊接分會(huì)2008年全國(guó)高能束加工技術(shù)研討會(huì)、北京電機(jī)工程學(xué)會(huì)第十屆粒子加速器學(xué)術(shù)交流會(huì)論文集[C];2008年

2 楊種田;楊兵;周霖;劉傳勝;葉明生;付德君;;多弧-中頻磁控濺射沉積Ti-Si-N結(jié)構(gòu)與性能[A];2008年全國(guó)荷電粒子源、粒子束學(xué)術(shù)會(huì)議暨中國(guó)電工技術(shù)學(xué)會(huì)第十二屆電子束離子束學(xué)術(shù)年會(huì)、中國(guó)電子學(xué)會(huì)焊接專業(yè)委員會(huì)第九屆全國(guó)電子束焊接學(xué)術(shù)交流會(huì)、粒子加速器學(xué)會(huì)第十一屆全國(guó)離子源學(xué)術(shù)交流會(huì)、中國(guó)機(jī)械工程學(xué)會(huì)焊接分會(huì)2008年全國(guó)高能束加工技術(shù)研討會(huì)、北京電機(jī)工程學(xué)會(huì)第十屆粒子加速器學(xué)術(shù)交流會(huì)論文集[C];2008年

3 王軍生;童洪輝;趙嘉學(xué);韓大凱;戴彬;;影響磁控濺射均勻性的因素[A];第十三屆全國(guó)等離子體科學(xué)技術(shù)會(huì)議論文集[C];2007年

4 鄭華;劉實(shí);于洪波;王隆保;施力群;劉超卓;;磁控濺射方法制備含氦鈦膜及氦的熱解吸研究[A];第八屆全國(guó)核靶技術(shù)學(xué)術(shù)交流會(huì)論文摘要集[C];2004年

5 王成彪;于翔;劉陽;于德洋;呂建國(guó);;三種中頻對(duì)靶磁控濺射類金剛石膜的性能比較[A];第六屆全國(guó)表面工程學(xué)術(shù)會(huì)議論文集[C];2006年

6 張龍;朱健;吳t，

本文編號(hào)：2169962