發(fā)布時間：2018-05-21 06:34

  本文選題：微機電系統(tǒng) + 高g值�。� 參考：《沈陽工業(yè)大學》2017年碩士論文

【摘要】：微機電系統(tǒng)(MEMS)技術(shù),是一種在集成電路工藝基礎(chǔ)上發(fā)展而來的微半導體結(jié)構(gòu)制造技術(shù),由于具有傳統(tǒng)機械制造技術(shù)難以超越的巨大優(yōu)勢,自問世以來就備受各方關(guān)注。憑借半導體材料的電學特性和力學特性,MEMS傳感器已成為代替機械式傳感器的最佳選擇�；�于硅材料的MEMS壓阻式加速度敏感芯片,工作原理簡單,制造成本低,工藝成熟,成為微加速度傳感器制造商的主流產(chǎn)品。目前,一般的加速度敏感芯片主要采用懸臂梁和質(zhì)量塊結(jié)合的結(jié)構(gòu),這種結(jié)構(gòu)雖然結(jié)構(gòu)簡單、運行穩(wěn)定,但在高g值條件下,卻存在著性能方面的嚴重缺陷,難以適應較復雜的武器應用環(huán)境。這也使得武器關(guān)鍵部位性能水平提升受到限制。為使MEMS壓阻式加速度敏感芯片能夠適應高沖擊過載環(huán)境,提升微傳感器的整體性能,現(xiàn)在對普通加速度芯片結(jié)構(gòu)進行改造,設計出一種帶有微梁的加速度敏感芯片結(jié)構(gòu)。該結(jié)構(gòu)解決了芯片靈敏度與固有頻率之間的矛盾,具有較高的抗過載能力。通過結(jié)構(gòu)優(yōu)化,采用刻蝕凹槽的方式解決了芯片結(jié)構(gòu)的交叉耦合問題。在滿量程100000g條件下,經(jīng)過優(yōu)化分析,芯片在1mA恒流源供電時的電壓輸出為21.42m V,固有頻率為1.025MHz,最大交叉耦合為4.24%,芯片能夠承受至少650000g的加速度沖擊。在以往芯片結(jié)構(gòu)優(yōu)化方式的基礎(chǔ)上,提出了兩種結(jié)構(gòu)優(yōu)化方式。通過這兩種方式,確定了芯片結(jié)構(gòu)的具體參數(shù),選出最佳的芯片結(jié)構(gòu),并給出其版圖與工藝過程。
[Abstract]:Micro-electromechanical system (MEMS) technology is a kind of microsemiconductor structure manufacturing technology developed on the basis of integrated circuit technology. Because of its great advantage that traditional mechanical manufacturing technology is difficult to surpass, it has attracted much attention since it came out. MEMS sensors, based on the electrical and mechanical properties of semiconductor materials, have become the best alternative to mechanical sensors. The MEMS piezoresistive accelerometer chip based on silicon material has the advantages of simple working principle, low manufacturing cost and mature process, so it has become the mainstream product of micro accelerometer manufacturer. At present, the general accelerometer chip mainly adopts the structure of cantilever beam and mass block. Although this kind of structure is simple and stable, it has serious defects in performance under the condition of high g value. It is difficult to adapt to the complicated weapon application environment. This also limits the performance level of key parts of the weapon. In order to make the MEMS piezoresistive accelerometer chip adapt to the environment of high impact overload and improve the overall performance of the microsensor, the structure of the ordinary accelerometer chip is modified and a acceleration-sensitive chip structure with microbeam is designed. The structure solves the contradiction between the sensitivity and the natural frequency of the chip, and has a high resistance to overload. The cross-coupling problem of chip structure is solved by etching grooves through structure optimization. Under the condition of full range 100000g, the output voltage of the chip is 21.42m V, the natural frequency is 1.025 MHz, the maximum cross-coupling is 4.24 g, and the chip can withstand at least 650000g acceleration shock. On the basis of the previous chip structure optimization, two kinds of structure optimization methods are proposed. Through these two methods, the specific parameters of the chip structure are determined, the optimum chip structure is selected, and the layout and process are given.
【學位授予單位】：沈陽工業(yè)大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN402;TP212

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本文編號：1918135