發(fā)布時(shí)間：2018-07-10 06:43

  本文選題：氧化鋅 + 異質(zhì)結(jié)��； 參考：《北京科技大學(xué)》2016年博士論文

【摘要】：紫外光電器件在綠色照明、光通信和紫外探測等方面有著廣泛的應(yīng)用和巨大的前景。第三代新型半導(dǎo)體氧化鋅(ZnO)材料是一種重要的Ⅱ-Ⅵ族直接帶隙半導(dǎo)體材料,室溫下ZnO的禁帶寬度為3.37 eV,其激子束縛能高達(dá)60 meV,遠(yuǎn)大于室溫’下的熱激活能26 meV。此外,ZnO具有良好的光電導(dǎo)特性,光學(xué)增益系數(shù)高達(dá)320 cm-1,對(duì)紫外光有較強(qiáng)的吸收能力,同時(shí)還具有良好的壓電和熱電特性,而且原料豐富、成本低、無毒、環(huán)境友好。因此作為半導(dǎo)體紫外光電器件的重要材料,ZnO在電致發(fā)光和紫外探測領(lǐng)域具有重要應(yīng)用潛力。本論文主要研究了薄膜和納米棒陣列ZnO材料的光電性質(zhì)�；�于ZnO/p-GaN薄膜異質(zhì)結(jié),我們研究了其在近紫外波段的發(fā)光現(xiàn)象和光伏效應(yīng),并以此設(shè)計(jì)實(shí)現(xiàn)了藍(lán)光發(fā)光二極管和自驅(qū)動(dòng)高速紫外光探測器件：基于ZnO納米棒陣列/NiO異質(zhì)結(jié),深入研究了異質(zhì)結(jié)的自驅(qū)動(dòng)光電響應(yīng)特性：基于ZnO/Spiro-MeOTAD有機(jī)無機(jī)雜化異質(zhì)結(jié),系統(tǒng)研究了該異質(zhì)結(jié)的自驅(qū)動(dòng)光電響應(yīng)性能以及應(yīng)變對(duì)器件光響應(yīng)性能的調(diào)控規(guī)律。通過優(yōu)化實(shí)驗(yàn)條件和調(diào)控合成參數(shù),分別利用磁控濺射技術(shù)和水熱合成法制備了ZnO薄膜與ZnO納米棒陣列。研究了水熱法前驅(qū)液濃度對(duì)ZnO納米棒陣列形貌的影響規(guī)律。生長的ZnO薄膜和ZnO納米棒陣列都具有六方纖鋅礦結(jié)構(gòu),沿[0001]極性軸方向取向生長,同時(shí)光學(xué)特性優(yōu)異,具有較強(qiáng)的禁帶邊發(fā)射峰和弱的可見光發(fā)射峰�；魻栃�應(yīng)測試得到ZnO薄膜的電子濃度和電子遷移率分別為3.13×1018 cm-3和14.6cm2V-1 s-1。研究了ZnO薄膜與p型GaN薄膜形成的異質(zhì)結(jié)發(fā)光二極管的電致發(fā)光規(guī)律。該二極管器件的串聯(lián)電阻約為102Ω,發(fā)光閾值電壓約為2.7V。電致發(fā)光譜表明,當(dāng)電壓高于2.7V時(shí),實(shí)現(xiàn)了二極管穩(wěn)定高亮的460nm藍(lán)光輸出,發(fā)光效率約0.89%,并且發(fā)光強(qiáng)度和注入電流遵循冪指數(shù)法則,即L∝Im,低注入電流(10mA)時(shí)L-I曲線呈超線性關(guān)系(m=1.35),而高注入電流下(10mA)幾乎成線性關(guān)系(m=0.95),m非常接近1.0表明非輻射復(fù)合缺陷對(duì)器件光發(fā)射的影響較小。研究了基于ZnO薄膜和p型GaN薄膜的全無機(jī)pn結(jié)紫外探測器的自驅(qū)動(dòng)光電響應(yīng)性能。該異質(zhì)結(jié)器件在紫外光波段具有優(yōu)異的光伏效應(yīng),1.0 mW/cm2紫外光入射時(shí),可得到開路電壓和短路電流分別為1.32 V和5.55μA。光電流-時(shí)間(I—t)響應(yīng)特性測試結(jié)果表明,該器件對(duì)514 nm的可見光沒有響應(yīng),而365 nm和254 nm兩種波長的紫外光輻照時(shí),光電流的響應(yīng)快速、連續(xù)且可重復(fù),響應(yīng)時(shí)間和恢復(fù)時(shí)間均小于0.3s。光電流隨著兩種波長紫外光光強(qiáng)的增大而線性增大,且沒有出現(xiàn)飽和現(xiàn)象。光譜響應(yīng)度曲線測試結(jié)果顯示該器件具有高達(dá)102的紫外-可見光抑制比,響應(yīng)度的最大值高達(dá)25mA/W,該值遠(yuǎn)大于之前已報(bào)道的自驅(qū)動(dòng)紫外探測器的值。研究了ZnO納米棒陣列和p型NiO薄膜形成的全無機(jī)pn結(jié)紫外探測器的自驅(qū)動(dòng)光電響應(yīng)性能。光電測試結(jié)果表明,該器件可工作在光伏模式,零伏偏壓下,在波長355 nm功率3.2 mW/cm2的紫外光輻照時(shí)可產(chǎn)生顯著的約0,3μA光電流。在0.1 mV正向偏壓下,紫外光開啟和關(guān)閉時(shí)光電流呈正負(fù)交替變化,表明是一種快速開關(guān)二進(jìn)制響應(yīng),主要?dú)w因于ZnO/NiO器件的光伏特性和低的開啟電壓。零伏偏壓下器件的響應(yīng)度隨著紫外光輻照功率的增加先快速增加然后逐漸減小,0.4 mW/cm2輻照助率下達(dá)到了最大值0.44 mA/W。研究了柔性襯底上ZnO薄膜與p型Spiro-MeOTAD形成的有機(jī)無機(jī)雜化異質(zhì)結(jié)紫外探測器的自驅(qū)動(dòng)光電響應(yīng)性能及其應(yīng)變調(diào)控規(guī)律。電學(xué)性能測試表明,異質(zhì)結(jié)呈現(xiàn)典型的非線性整流特性,開啟電壓較低(～0.8V),±1V偏壓下的整流比高達(dá)7.69×102。光電測試結(jié)果表明,器件在紫外光輻照下具有明顯的光響應(yīng)和顯著的光伏效應(yīng)。器件在零伏偏壓下的光電流響應(yīng)快速、連續(xù)、可重復(fù)且沒有明顯衰減,響應(yīng)時(shí)間和恢復(fù)時(shí)間小于0.2s。應(yīng)變對(duì)ZnO/Spiro-MeOTAD器件光電響應(yīng)性能的影響規(guī)律表明,當(dāng)施加的拉伸應(yīng)變逐漸增加時(shí),器件的光電流、光響應(yīng)度和比探測度逐漸增大,當(dāng)拉伸應(yīng)變?cè)黾拥?.753%時(shí),光電流、光響應(yīng)度和比探測度相比無應(yīng)變時(shí)增加了近1倍；相反地,壓縮應(yīng)變?cè)黾訒r(shí)光電流、光響應(yīng)度和比探測度減小。這主要是由于ZnO在不同應(yīng)變下產(chǎn)生的壓電極化電荷會(huì)影響異質(zhì)結(jié)耗盡區(qū)內(nèi)建電場的強(qiáng)弱,從而導(dǎo)致光生電子空穴對(duì)的分離效率被提高或抑制造成的。
[Abstract]:UV optoelectronic devices have extensive applications and great prospects in green lighting, optical communication and ultraviolet detection. The third generation of new semiconductor Zinc Oxide (ZnO) material is an important type of II VI direct band gap semiconductor material. The band gap of ZnO at room temperature is 3.37 eV, and its exciton binding energy is up to 60 meV, far greater than room temperature. The thermal activation energy is 26 meV.. In addition, ZnO has good photoconductivity, optical gain coefficient up to 320 cm-1, strong absorption capacity to ultraviolet light, good piezoelectricity and thermoelectric properties, and rich in raw materials, low cost, non-toxic and environmentally friendly. Therefore, ZnO is an important material for semiconductor UV optoelectronic devices. The optical and UV detection fields have important potential applications. This paper mainly studies the photoelectric properties of the thin film and nanorod array ZnO materials. Based on the ZnO/p-GaN thin film heterojunction, we have studied its luminescence and photovoltaic effect in the near ultraviolet band, and designed the blue light emitting diode and the self driven high-speed ultraviolet detection. Device: Based on the ZnO nanorod array /NiO heterojunction, the self driven photoelectric response characteristics of the heterojunction are studied in depth: Based on the ZnO/Spiro-MeOTAD organic-inorganic hybrid heterojunction, the self driven photoelectric response and the regulation of the response performance of the heterostructure to the optical response of the device are systematically studied. ZnO films and ZnO nanorod arrays were prepared by magnetron sputtering and hydrothermal synthesis. The influence of the concentration of hydrothermal precursor on the morphology of ZnO nanorods was studied. The growth of ZnO and ZnO nanorods arrays had six zinite structures, along the direction of the 0001] polar axis, and the optical properties of the nanorods. Excellent, strong band edge emission peak and weak visible light emission peak. The electron concentration and electron mobility of ZnO film are 3.13 x 1018 cm-3 and 14.6cm2V-1 s-1. respectively. The electroluminescence of the heterojunction light emitting diode of ZnO film and P type GaN film is studied. The series resistance of the diode device is in series. About 102 Omega, the luminescence threshold voltage of about 2.7V. electroluminescence spectrum shows that when the voltage is higher than 2.7V, the high brightness 460nm blue light output of the diode is achieved, the luminous efficiency is about 0.89%, and the luminescence intensity and injection current follow the power exponent rule, that is, L Im, and low injection current (10mA), the L-I curve is superlinear (m=1.35), and high injection electricity The flow (10mA) is almost linear (m=0.95), and M is very close to 1. The effect of non radiation composite defects on the optical emission is small. The self driving photoelectric response of all inorganic PN junction UV detectors based on ZnO film and P GaN thin film is studied. The heterojunction device has excellent photovoltaic effect and 1 mW/cm2 violet in ultraviolet band. When the external light is incident, the test results of the open circuit voltage and the short circuit current of 1.32 V and 5.55 mu A. photocurrent time (I - t) show that the device has no response to the visible light of 514 nm, while the 365 nm and 254 nm two wavelengths are irradiated by ultraviolet light, and the photocurrent should be fast, continuous and repeatable, response time and recovery time. The average less than 0.3s. photocurrent increases linearly with the increase of ultraviolet light intensity of two wavelengths, and does not appear to be saturated. The spectral response curve test results show that the device has up to 102 UV visible light rejection ratio and the maximum response degree is up to 25mA/W, which is much larger than the value of the previously reported UV detector. The self driving photoelectric response performance of the all inorganic PN junction UV detector formed by ZnO nanorod array and P NiO thin film is studied. The photoelectric test results show that the device can work in the photovoltaic mode, the zero volt bias, and can produce a significant approximately 0,3 micron photocurrent at the wavelength of 355 nm power of 3.2 mW/cm2 at the zero volt voltage. In the 0.1 mV positive bias voltage, the device can produce a positive bias voltage at 0.1 mV positive bias. At the same time, the time current of UV opening and closing is positive and negative alternately, indicating that it is a fast switching binary response, which is mainly attributed to the photovoltaic characteristics and low open voltage of the ZnO/NiO device. The response degree of the device under the zero volt bias increases rapidly and gradually decreases with the increase of ultraviolet radiation power, and the 0.4 mW/cm2 irradiation assistance The maximum value of 0.44 mA/W. is reached to study the self driving photoelectric response performance and strain regulation of the organic and inorganic hybrid heterojunction UV detector formed by ZnO thin film on the flexible substrate and P Spiro-MeOTAD. The electrical properties test shows that the heterojunction presents a typical nonlinear rectifying characteristic, the opening voltage is lower (to 0.8V), and the + 1V bias voltage is under the bias voltage. The 7.69 x 102. photoelectric test results show that the device has obvious light response and significant photovoltaic effect under UV irradiation. The photocurrent response of the device under zero voltage bias is fast, continuous, repeatable and without obvious attenuation, and the response time and recovery time are smaller than the photoelectric response of the 0.2s. strain to the ZnO/Spiro-MeOTAD device. The effect of the performance shows that when the tensile strain is increased gradually, the photocurrent, the light response degree and the specific detection measure gradually increase. When the tensile strain increases to 0.753%, the photocurrent, the light response degree and the specific detection measure increase nearly 1 times when compared with the non strain measurement. On the contrary, the compression strain increases the time current, the light response degree and the ratio exploration. This is mainly due to the effect of the piezoelectric polarization charge of ZnO under different strains on the strength of the built electric field in the heterojunction depleted region, which leads to the increase or suppression of the separation efficiency of the photogenerated electron hole pair.
【學(xué)位授予單位】：北京科技大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN23;TN304.21

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4 王楠;ZnO/Cu_2O納米核殼異質(zhì)結(jié)陣列的制備及光電特性研究[D];遼寧師范大學(xué);2015年

5 陳惠娟;納米碳/硅異質(zhì)結(jié)的制備及其氣敏性研究[D];中國石油大學(xué);2010年

6 高熙禮;用磁控濺射方法制備非晶碳膜/硅異質(zhì)結(jié)及其電輸運(yùn)性質(zhì)的研究[D];中國石油大學(xué);2008年

7 張樂陶;Fe_3O_4基異質(zhì)結(jié)的微觀結(jié)構(gòu)、磁性和輸運(yùn)性質(zhì)[D];天津大學(xué);2010年

8 袁德華;全氧化物異質(zhì)結(jié)HoMnO_3/Nb-SrTiO_3的電學(xué)性質(zhì)研究[D];煙臺(tái)大學(xué);2011年

9 曹建業(yè);釩酸銀微米片及其異質(zhì)結(jié)的合成及光催化性質(zhì)的研究[D];吉林大學(xué);2014年

10 岳美瓊;ZnO/BaTiO_3異質(zhì)結(jié)的液相法（CSD）制備及其電性能研究[D];西南科技大學(xué);2010年

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