紅外高折射率材料碲鍺鉛的生長、性能及應(yīng)用研究
發(fā)布時(shí)間：2018-07-16 14:54
【摘要】：為了滿足數(shù)值天氣預(yù)報(bào)的需要,用于大氣的溫度、濕度及成分遙感探測的大氣垂直探測儀采用紅外窄帶濾光片將紅外光譜通道精確分開,以準(zhǔn)確提取各光譜通道的光學(xué)信息。由于紅外窄帶濾光片的設(shè)計(jì)制造是建立在合適的選取膜層材料的基礎(chǔ)上,并且采用高折射率薄膜材料將能有效減少膜層的數(shù)量、降低產(chǎn)品設(shè)計(jì)和制造難度、提高產(chǎn)品在惡劣環(huán)境中的可靠性,對于紅外高折射率材料的研究具有十分重要的意義。碲化鉛(PbTe)是目前可供實(shí)際使用的折射率最高的紅外材料。雖然多年來我們獨(dú)特的碲化鉛材料已應(yīng)用于紅外帶通濾光片的設(shè)計(jì)和制造中,并在空間遙感任務(wù)中發(fā)揮了重要作用,然而由于其內(nèi)稟性質(zhì)造成機(jī)械強(qiáng)度較低,使由其構(gòu)成的濾光片劃片和切割過程中出現(xiàn)“崩邊”。本項(xiàng)研究的主要目的和內(nèi)容之一是研究碲化鉛與另一種IV-VI族窄禁帶半導(dǎo)體材料碲化鍺所形成的贗二元合金固溶體——碲鍺鉛薄膜的力學(xué)性能,希望通過“固溶強(qiáng)化”來提高紅外帶通濾光片高折射率鍍膜材料的機(jī)械強(qiáng)度。碲鍺鉛作為紅外高折射率材料應(yīng)用于紅外帶通濾光片的基礎(chǔ)是生長出性能優(yōu)異的材料。由于碲鍺鉛材料是一種具有鐵電相變特性的贗二元合金固溶體,其中鍺組分x值的決定著材料的物理性能。因此,如何控制由于溶質(zhì)分凝問題而產(chǎn)生的組分分布不均勻性也是本項(xiàng)研究的主要內(nèi)容之一。目前,紅外帶通濾光片的制造都是采用熱蒸發(fā)技術(shù)。因此,將碲鍺鉛材料應(yīng)用于紅外帶通濾光片的生產(chǎn)實(shí)際中,首先要研究蒸發(fā)碲鍺鉛體材料后沉積在基片上的薄膜組分與源材料組分之間的差異,薄膜組分的變化規(guī)律,以及薄膜晶體結(jié)構(gòu)的特點(diǎn),這也是本項(xiàng)研究主要內(nèi)容之一。碲鍺鉛薄膜的基本吸收邊隨碲化鍺含量的增加而移向短波。利用這種基本吸收邊可調(diào)性和碲鍺鉛特有的高折射優(yōu)勢,將可以部分取代目前所使用的中波紅外高折射率鍺材料,以減少帶通濾光片的膜層數(shù)量。探討碲鍺鉛薄膜在中波紅外的性能,以及作為高折射率材料取代鍺的可能性,也是本項(xiàng)研究主要內(nèi)容之一。在本項(xiàng)研究中取得了如下成果:1.通過對Bridgman法晶體生長過程中成分分凝與偏析及其控制原理的研究,對碲鍺鉛材料的生長過程進(jìn)行了數(shù)值模擬分析,優(yōu)化設(shè)計(jì)了材料生長工藝參數(shù),實(shí)現(xiàn)了控制材料組分分布均勻性的目標(biāo)。在此基礎(chǔ)上生長出兩種能夠滿足紅外帶通濾光片生產(chǎn)需要的碲鍺鉛材料。其中長波紅外碲鍺鉛材料利用其優(yōu)于碲化鉛的力學(xué)性能,以解決工程應(yīng)用中濾光片產(chǎn)品“崩邊”的問題;中波紅外碲鍺鉛材料利用其高于鍺的折射率值,以及碲化鉛薄膜基本吸收邊的可調(diào)性,以期部分取代目前所使用的中波紅外高折射率鍺材料,減少所需的膜層數(shù)和入射角變化對濾光片產(chǎn)品光譜性能的影響。2.研究發(fā)現(xiàn)相比碲化鉛薄膜,碲鍺鉛薄膜的硬度可提高5倍之多,楊氏模量可提高2倍之多,薄膜與鍺基片的附著力可提高3倍之多,并且碲鍺鉛薄膜硬度與晶粒尺寸之間的關(guān)系遵循Hall-Petch方程。此外,從固溶強(qiáng)化的原理、碲鍺鉛材料鐵電相變的基本原理、以及強(qiáng)局域化彈性應(yīng)變場與位錯(cuò)遷移率之間的關(guān)系解釋了室溫下碲鍺鉛薄膜硬度和楊氏模量、薄膜與鍺基片的附著力隨源材料中鍺濃度的變化機(jī)理。3.碲化鉛和碲化鍺的蒸汽壓差值造成了熱蒸發(fā)沉積的碲鍺鉛薄膜與源材料之間的組分不一致性。研究發(fā)現(xiàn)這種不一致性也與基片溫度有關(guān),在合適的基片溫度,采用電子束蒸發(fā)碲鍺鉛材料沉積的薄膜與源材料之間的組分接近一致。這種一致性可以解釋為碲化鉛基半導(dǎo)體材料的低熱導(dǎo)率特性引起電子束蒸發(fā)的“燒蝕”特性。研究還發(fā)現(xiàn),隨著鍺濃度的增大,薄膜中碲濃度呈現(xiàn)出逐漸減少的趨勢,薄膜的富碲特征轉(zhuǎn)變?yōu)槿表谔卣鳌＿@種組分相關(guān)性可以歸因于鍺離子半徑小于鉛離子半徑,Ge-Te的鍵能弱于Pb-Te的鍵能,以及替代鉛離子的鍺離子偏離晶胞中心造成其與鄰近碲離子的距離不同。此外,研究也發(fā)現(xiàn)在室溫下具有菱形結(jié)構(gòu)鐵電相的碲鍺鉛薄膜中出現(xiàn)了碲化鍺和碲的高壓相,呈現(xiàn)出高壓多相性。其可以通過誘發(fā)碲鍺鉛鐵電相變的鍺替代離子從無序分布到有序分布的轉(zhuǎn)變得到解釋。4.研究發(fā)現(xiàn),在基片溫度150°C時(shí),蒸發(fā)鍺組分x為0.18的碲鍺鉛材料可以獲得在中波紅外大氣窗口(3~5μm)同時(shí)具有最大折射率值n和最小消光系數(shù)k的碲鍺鉛薄膜。為了探討碲鍺鉛作為高折射率材料取代鍺的可能性,使用其作為高折射率材料設(shè)計(jì)制作了一個(gè)中心波長為4μm的全介質(zhì)Fabry-Perot濾光片。相比使用鍺作為高折射率材料的濾光片,其具有更為優(yōu)異的帶寬性能和截止深度。
[Abstract]:In order to meet the needs of the numerical weather forecast, the atmospheric vertical detector used for remote sensing detection of atmospheric temperature, humidity and composition uses infrared narrow band filter to accurately separate the infrared spectral channels to accurately extract the optical information of the spectral channels. The design and manufacture of the infrared narrow band filter is based on the suitable selection of the film layer. On the basis of the material, the high refractive index thin film material will be able to reduce the number of the film effectively, reduce the difficulty of the product design and manufacture, and improve the reliability of the product in the bad environment. It is of great significance for the study of the infrared high refractive index material. Lead telluride (PbTe) is the highest refractive index of the infrared. Material. Although our unique lead telluride material has been applied to the design and manufacture of infrared bandpass filter for many years, it plays an important role in the space remote sensing task. However, because of its intrinsic nature, the mechanical strength is low, the "edge" in the process of cutting and cutting of the filters made up of it is the main part of this study. The purpose and content is to study the mechanical properties of the pseudo two element alloy solid solution - tellurium lead thin film formed by the other IV-VI group of narrow band gap semiconductors germanium telluride. It is hoped that the mechanical strength of the high refractive index coating material of the infrared band pass filter can be improved by "solid solution strengthening". The material applied to the infrared band pass filter is based on the material with excellent performance. As tellurium and germanium lead is a pseudo two element solid solution with ferroelectric phase change characteristics. The x value of germanium component determines the physical properties of the material. Therefore, how to control the heterogeneity of the component distribution due to the solute segregation problem is also the same One of the main contents of this study is that the infrared bandpass filter is made by thermal evaporation technology. Therefore, the application of tellurium and germanium lead material in the production of infrared bandpass filter is to study the difference between the film composition and the source and material components of the evaporated tellurium and germanium lead material and the composition of the film. The basic absorption edge of tellurium and germanium lead is moved to the short wave with the increase of germanium telluride content. Using this basic absorption edge tunability and the high refraction advantage of tellurium and germanium lead, the high refractive index of the medium wave infrared can be separated from the present use. Germanium materials are used to reduce the number of layers of bandpass filters. It is also one of the main contents of this study to investigate the performance of tellurium and germanium lead film in the medium wave infrared and the possibility of replacing germanium as a high refractive index material. In this study, the following results have been obtained: 1. through the segregation and segregation of components in the process of Bridgman crystal growth and its control, The growth process of tellurium and germanium lead material is numerically simulated and analyzed. The process parameters of material growth are optimized and the objective of controlling the distribution uniformity of material components is realized. On this basis, two kinds of tellurium and germanium lead materials which can meet the needs of the production of infrared band pass filter are grown. It is better than the mechanical properties of lead telluride to solve the problem of the "edge collapse" of the filter product in the engineering application, and the medium wave infrared tellurium and germanium lead materials use the refractive index value of the germanium and the tunability of the basic absorption edge of the lead telluride film, in order to partially replace the present medium wave infrared high refractive index germanium material and reduce the required film. The influence of the number and incidence angle on the spectral properties of the filter.2. found that the hardness of the tellurium film can be increased by 5 times more, the young's modulus can be increased by more than 2 times, the adhesion of the film to the germanium substrate can be increased by more than 3 times, and the relationship between the hardness of tellurium and germanium lead film and the grain size follows the Hall-Petch. In addition, from the principle of solid solution strengthening, the basic principle of ferroelectric phase transition of tellurium and germanium lead, the relationship between strong localized elastic strain field and dislocation migration rate explain the hardness and Young's modulus of tellurium, germanium and lead film at room temperature, the adhesion of the film and germanium substrate with the change mechanism of germanium concentration in the source materials.3. lead telluride and germanium telluride The difference between the vapor pressure difference and the composition of the tellurium and germanium lead film deposited by thermal evaporation is not consistent with the source material. It is found that this inconsistency is also related to the substrate temperature. At the appropriate substrate temperature, the composition of the films deposited by the electron beam evaporation tellurium lead material is close to that of the source material. This consistency can be explained as the consistency. The low thermal conductivity of lead telluride based semiconductor material causes the "ablation" characteristic of the electron beam evaporation. It is also found that the tellurium concentration in the thin films decreases gradually with the increase of germanium concentration, and the tellurium rich characteristics of the thin films are changed to tellurium deficiency. This component correlation can be attributed to the radius of the germanium ion less than the lead ion radius, Ge The bond energy of -Te is weaker than the bond energy of Pb-Te, and the germanium ions that replace the lead ions deviate from the cell center to cause their distance from the adjacent tellurium ions. In addition, the high pressure phase of germanium telluride and tellurium appeared in the tellurium tellurium lead film with rhombic structure at room temperature. The transition from disordered distribution to ordered distribution of germanium substitutional ions from lead-iron phase transition is explained by.4. study. It is found that, when the substrate temperature is 150 C, the tellurium, germanium, lead material, which has x of X of 0.18, can obtain the tellurium and germanium lead film with the maximum refractive index n and the minimum extinction coefficient K in the medium wave infrared atmosphere window (3~5 mu m). As the possibility of replacing germanium with high refractive index material, tellurium and germanium lead is used as a high refractive index material to design and produce a full medium Fabry-Perot filter with a central wavelength of 4 m. Compared with the filter with high refractive index material with germanium, it has more excellent bandwidth performance and cut-off depth.
【學(xué)位授予單位】：中國科學(xué)院研究生院(上海技術(shù)物理研究所)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TN304.24;TB383.2
本文編號：2126736
[Abstract]:In order to meet the needs of the numerical weather forecast, the atmospheric vertical detector used for remote sensing detection of atmospheric temperature, humidity and composition uses infrared narrow band filter to accurately separate the infrared spectral channels to accurately extract the optical information of the spectral channels. The design and manufacture of the infrared narrow band filter is based on the suitable selection of the film layer. On the basis of the material, the high refractive index thin film material will be able to reduce the number of the film effectively, reduce the difficulty of the product design and manufacture, and improve the reliability of the product in the bad environment. It is of great significance for the study of the infrared high refractive index material. Lead telluride (PbTe) is the highest refractive index of the infrared. Material. Although our unique lead telluride material has been applied to the design and manufacture of infrared bandpass filter for many years, it plays an important role in the space remote sensing task. However, because of its intrinsic nature, the mechanical strength is low, the "edge" in the process of cutting and cutting of the filters made up of it is the main part of this study. The purpose and content is to study the mechanical properties of the pseudo two element alloy solid solution - tellurium lead thin film formed by the other IV-VI group of narrow band gap semiconductors germanium telluride. It is hoped that the mechanical strength of the high refractive index coating material of the infrared band pass filter can be improved by "solid solution strengthening". The material applied to the infrared band pass filter is based on the material with excellent performance. As tellurium and germanium lead is a pseudo two element solid solution with ferroelectric phase change characteristics. The x value of germanium component determines the physical properties of the material. Therefore, how to control the heterogeneity of the component distribution due to the solute segregation problem is also the same One of the main contents of this study is that the infrared bandpass filter is made by thermal evaporation technology. Therefore, the application of tellurium and germanium lead material in the production of infrared bandpass filter is to study the difference between the film composition and the source and material components of the evaporated tellurium and germanium lead material and the composition of the film. The basic absorption edge of tellurium and germanium lead is moved to the short wave with the increase of germanium telluride content. Using this basic absorption edge tunability and the high refraction advantage of tellurium and germanium lead, the high refractive index of the medium wave infrared can be separated from the present use. Germanium materials are used to reduce the number of layers of bandpass filters. It is also one of the main contents of this study to investigate the performance of tellurium and germanium lead film in the medium wave infrared and the possibility of replacing germanium as a high refractive index material. In this study, the following results have been obtained: 1. through the segregation and segregation of components in the process of Bridgman crystal growth and its control, The growth process of tellurium and germanium lead material is numerically simulated and analyzed. The process parameters of material growth are optimized and the objective of controlling the distribution uniformity of material components is realized. On this basis, two kinds of tellurium and germanium lead materials which can meet the needs of the production of infrared band pass filter are grown. It is better than the mechanical properties of lead telluride to solve the problem of the "edge collapse" of the filter product in the engineering application, and the medium wave infrared tellurium and germanium lead materials use the refractive index value of the germanium and the tunability of the basic absorption edge of the lead telluride film, in order to partially replace the present medium wave infrared high refractive index germanium material and reduce the required film. The influence of the number and incidence angle on the spectral properties of the filter.2. found that the hardness of the tellurium film can be increased by 5 times more, the young's modulus can be increased by more than 2 times, the adhesion of the film to the germanium substrate can be increased by more than 3 times, and the relationship between the hardness of tellurium and germanium lead film and the grain size follows the Hall-Petch. In addition, from the principle of solid solution strengthening, the basic principle of ferroelectric phase transition of tellurium and germanium lead, the relationship between strong localized elastic strain field and dislocation migration rate explain the hardness and Young's modulus of tellurium, germanium and lead film at room temperature, the adhesion of the film and germanium substrate with the change mechanism of germanium concentration in the source materials.3. lead telluride and germanium telluride The difference between the vapor pressure difference and the composition of the tellurium and germanium lead film deposited by thermal evaporation is not consistent with the source material. It is found that this inconsistency is also related to the substrate temperature. At the appropriate substrate temperature, the composition of the films deposited by the electron beam evaporation tellurium lead material is close to that of the source material. This consistency can be explained as the consistency. The low thermal conductivity of lead telluride based semiconductor material causes the "ablation" characteristic of the electron beam evaporation. It is also found that the tellurium concentration in the thin films decreases gradually with the increase of germanium concentration, and the tellurium rich characteristics of the thin films are changed to tellurium deficiency. This component correlation can be attributed to the radius of the germanium ion less than the lead ion radius, Ge The bond energy of -Te is weaker than the bond energy of Pb-Te, and the germanium ions that replace the lead ions deviate from the cell center to cause their distance from the adjacent tellurium ions. In addition, the high pressure phase of germanium telluride and tellurium appeared in the tellurium tellurium lead film with rhombic structure at room temperature. The transition from disordered distribution to ordered distribution of germanium substitutional ions from lead-iron phase transition is explained by.4. study. It is found that, when the substrate temperature is 150 C, the tellurium, germanium, lead material, which has x of X of 0.18, can obtain the tellurium and germanium lead film with the maximum refractive index n and the minimum extinction coefficient K in the medium wave infrared atmosphere window (3~5 mu m). As the possibility of replacing germanium with high refractive index material, tellurium and germanium lead is used as a high refractive index material to design and produce a full medium Fabry-Perot filter with a central wavelength of 4 m. Compared with the filter with high refractive index material with germanium, it has more excellent bandwidth performance and cut-off depth.
【學(xué)位授予單位】：中國科學(xué)院研究生院(上海技術(shù)物理研究所)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TN304.24;TB383.2
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相關(guān)博士學(xué)位論文 前1條
1 謝平;紅外高折射率材料碲鍺鉛的生長、性能及應(yīng)用研究[D];中國科學(xué)院研究生院(上海技術(shù)物理研究所);2016年
，本文編號：2126736
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