二維傳感器材料的合成及化學(xué)成分空間結(jié)構(gòu)分布調(diào)制
[Abstract]:Because of the zero band gap, the application of graphene has been greatly restricted in the field of electron and photoelectron. The two-dimensional transition metal two sulfur compound (2D-TMDs), represented by single layer Mo S_2, has non zero band gap, which has aroused great interest. The two-dimensional semiconductor material represented by 2D-TMDs has the ultra thin, flexible and semiconductor properties. The rich exciton dynamics, valley polarization, high specific surface and low cost have important applications in the field of new generation of sensors. In order to fully develop the potential applications of these two dimensional semiconductor materials in the field of electronic and photoelectrons and the new sensor field based on two dimensional electrons and photoelectrons. The composition, structure, and electronic properties and the spatial distribution of these two dimensional atomic crystals are precisely modulated. The contents of this article include the following points: (1) we first synthesized the basic 2D-TMDs, based on the strategy of using the transverse heteroepitaxy and in situ change of reactant, and the two dimensional semiconductor crosswise was grown at the international rate. Heterojunction, the two-dimensional WS_2-WSe_2, Mo S_2-Mo Se_2 transverse heterojunction was obtained. The heterojunction in the optical microscope and the atomic force microscopy (AFM) presented the regular triangular shape. The thickness is uniform and the surface is smooth. The sample is a single layer, double layer or less layer. Raman and fluorescence studies show the modulation of different two-dimensional semiconductors on the spatial distribution. Different two-dimensional semiconductors (such as WS_2 and WSe_2) have no obvious overlap and gap at the optical resolution limit. Different two-dimensional semiconductors in the heterojunction are seamlessly connected. Transmission electron microscopy and electron diffraction studies show heterogeneous single crystal structures. The study of the distribution of elements in the X ray spectrometer shows that the composition of the heterojunction is realized. Modulation of spatial distribution. Electronic, optoelectronic devices, including diodes and triode, are prepared by atomic thin WSe_2-WS_2 heterojunction. The devices show excellent rectifying behavior and photocurrent generation behavior. We also point out the possible use of two dimensional semiconductor transverse heterojunction in the sensor. On the basis of the prepared transverse heterojunction, it is proposed. The concept of "interface" to "boundary" changes in two-dimensional heterojunction. (2) in order to fully develop the potential application of 2D-TMDs and other two-dimensional semiconductors in the field of sensors, it is necessary to accurately control the band gap and electronic properties of these two-dimensional semiconductors. We first synthesized two dimensional WS_ (2x) Se_ (2-2x) semiconductor alloy nanoscale and controlled the alloy. The micro Raman study shows that the frequency of the Raman resonance varies continuously with the variation of the composition. The micro fluorescence study shows that the position of the fluorescence peak is controlled by the continuous variation of the composition, and the band gap of the alloy nanoscale is regulated. The transmission electron microscope studies confirm that the alloy nanoscale is homogeneous single crystal structure with good crystalline quality. The electronic properties of the two-dimensional WS_ (2x) Se_ (2-2x) semiconductor nanoscale, including the carrier type and concentration, the valve voltage, and the carrier mobility with the chemical composition of the alloy continuously change. This research is designed to design two-dimensional electricity with controllable response and device characteristics. Sub, optoelectronic devices and a key step in the sensor process based on two-dimensional electron and photoelectrons. (3) we carried out high temperature P steam treatment to 2D-WS_2 to achieve the control of the electronic performance of 2D-WS_2. The optical microscope shows that P doping does not change the appearance of nanoscale, and AFM shows that our samples are single layer and less layer. The micro Raman study shows that P doping does not change the phonon structure of the sample basically. The micro fluorescence study shows that the doping of P has changed the electronic structure of the nanoscale. The study of electrical properties shows that the doping of P has changed the semiconductor properties of the nanoscale, and the doped 2D-WS_2 is n, bipolar and P type semiconductor. The research results laid the foundation for the small, flexible, integrated, intelligent, and networked sensors based on the two-dimensional semiconductor, which successfully controlled the composition, structure, electronic properties and spatial distribution of two dimensional semiconductors, and provided an important two-dimensional electron to achieve atomic thin. The material platform of Optoelectronics and sensors provides a solid foundation for the design of the new generation of integrated circuits and highly flexible and highly sensitive sensors.
【學(xué)位授予單位】:湖南大學(xué)
【學(xué)位級別】:博士
【學(xué)位授予年份】:2016
【分類號】:TP212;TN304
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