硅基微環(huán)諧振器的設(shè)計(jì)制作及非線性應(yīng)用
發(fā)布時(shí)間：2018-07-22 11:42
【摘要】：21世紀(jì)是一個(gè)高度信息化的時(shí)代,信息的傳輸、處理和存儲面臨越來越高的要求,傳統(tǒng)的電互連技術(shù)正面臨信號延遲、功耗和散熱等“電子瓶頸”,取而代之的,光互連技術(shù)因不存在RC延遲、傳輸速率快、抗電磁串?dāng)_、傳輸帶寬大、傳輸能耗低等優(yōu)點(diǎn)被廣泛應(yīng)用于信息處理領(lǐng)域。絕緣體上硅材料(Silicon-on-insulator,簡稱SOI)由于其在通信波段透明、折射率差大以及與標(biāo)準(zhǔn)的CMOS (Complementary-Metal-Oxide-Semiconductor)工藝完全兼容等優(yōu)點(diǎn)成為最熱門的低成本高集成度光互連平臺。在眾多硅基光子集成器件中,微環(huán)諧振器由于對特定的波長諧振增強(qiáng)、光傳輸?shù)姆较蚝吐窂娇煽�、結(jié)構(gòu)緊湊、設(shè)計(jì)自由度大、便于與其它器件集成等優(yōu)點(diǎn),成為光子集成回路中最重要的基礎(chǔ)功能單元之被用來構(gòu)建多種不同用途的集成光學(xué)器件。由于微環(huán)諧振器對光強(qiáng)有較大的諧振增強(qiáng)作用,微環(huán)內(nèi)的光功率密度比直波導(dǎo)內(nèi)的大很多倍,其中的非線性效應(yīng)將更加顯著。本論文全面、深入地研究了硅基微環(huán)諧振器的工作原理和性質(zhì),詳細(xì)闡述了微環(huán)諧振器的設(shè)計(jì)方法,探索了制作微環(huán)諧振器的重要工藝過程,并對微環(huán)諧振器中的光學(xué)非線性現(xiàn)象和光頻梳應(yīng)用展開了理論與實(shí)驗(yàn)研究。本文的研究成果可以總結(jié)為以下幾個(gè)方面：(1)探索開發(fā)了基于不同材料體系(硅、二氧化硅、氮化硅等)的精密微納加工工藝,主要包括材料沉積、電子束曝光、紫外光刻、等離子體感應(yīng)耦合(ICP)干法刻蝕、濕法刻蝕、蒸鍍剝離等。詳細(xì)探索并優(yōu)化了多種膠在多種襯底上的電子束曝光工藝；開發(fā)了不同材料體系上的Bosch分步深刻蝕、同步淺刻蝕、各向同性刻蝕的硅基ICP干法刻蝕和濕法腐蝕工藝,制備了高質(zhì)量的波導(dǎo)、光柵、光子晶體、微環(huán)等。(2)設(shè)計(jì)并制備了單次刻蝕的垂直光柵耦合SOI微環(huán)諧振器,雙端光柵耦合效率最高可達(dá)-8 dB,即40%,3 dB帶寬約為35 nm,半徑為40μm時(shí),其Q值約為55329,消光比ER為18 dB,制備的SOI微環(huán)諧振器已達(dá)到國際先進(jìn)水平,其雙穩(wěn)態(tài)和四波混頻等非線性效應(yīng)明顯,為低功耗集成非線性器件奠定了基礎(chǔ)。另外,通過在微環(huán)中引入MZI結(jié)構(gòu),利用熱電級調(diào)制MZI雙臂,在功耗9.82 mW時(shí),首次實(shí)現(xiàn)了微環(huán)諧振器的諧振間隔從零到一整個(gè)FSR (1.17nm)的連續(xù)可調(diào)。(3)首次設(shè)計(jì)并制備了應(yīng)用于厚Si3N4薄膜上的聚焦型高耦合效率寬譜光柵耦合器,該耦合器結(jié)合倒錐和聚焦型光柵齒,結(jié)構(gòu)緊湊,制作簡單,耦合效率高,對準(zhǔn)容差大,便于器件的大面積制備與測試。耦合器的尺寸為70.2 μm×19.7μm,最佳耦合效率-3.7 dB,1-dB帶寬54 nm。(4)提出了SU-8覆蓋的刻蝕型端面耦合方案。使用相向的錐形結(jié)構(gòu),結(jié)合聚合物曝光與端面刻蝕的方法,通過電子束曝光獲得聚合物與光纖的耦合端面,提高端面質(zhì)量,減小耦合損耗。模擬得到的光場從氮化硅波導(dǎo)到SU-8波導(dǎo)中的模式耦合損耗共為0.24 dB。(5)深入研究基于片上微環(huán)諧振器的光學(xué)頻率梳產(chǎn)生原理,設(shè)計(jì)并制作了C波段內(nèi)寬帶零色散平坦、耦合效率可控的Si3N4上微環(huán)諧振器,利用LPCVD、電子束曝光、剝離蒸鍍和ICP干法刻蝕等工藝,制備了不同半徑、不同耦合間距的氮化硅微環(huán)諧振器,嘗試?yán)铆h(huán)對光強(qiáng)的諧振放大以及Si3N4的三階非線性效應(yīng)產(chǎn)生級聯(lián)四波混頻進(jìn)而激發(fā)光頻梳。
[Abstract]:Twenty-first Century is a highly informative age, information transmission, processing and storage are facing more and more high requirements. The traditional electrical interconnection technology is facing the "electronic bottleneck" such as signal delay, power consumption and heat dissipation. The optical interconnection technology has no RC delay, fast transmission rate, anti electromagnetic crosstalk, large transmission bandwidth and low transmission energy consumption. Such advantages are widely used in the field of information processing. Silicon-on-insulator (SOI) has become the hottest low cost and high integration optical interconnection platform because of its advantages of transparent communication band, poor refractive index and fully compatible with standard CMOS (Complementary-Metal-Oxide-Semiconductor) technology. In polysilicon based photonic integrated devices, microring resonators have become the most important basic functional units in photonic integrated circuits, due to the enhancement of specific wavelength resonance, the direction and path of light transmission, the compact structure, the large design freedom and easy integration with other devices. Because of the greater resonance enhancement of the light intensity by the microring resonator, the optical power density in the micro ring is much larger than that in the direct waveguide, and the nonlinear effect will be more significant. This paper has thoroughly studied the working principle and properties of the silicon based microring resonator, and elaborated the design method of the microring resonator. The important process of microring resonator is made, and the optical nonlinear phenomena and optical frequency comb applications in the microring resonator are studied theoretically and experimentally. The research results of this paper can be summarized as follows: (1) the precision micro processing technology based on different material systems (silicon, silicon dioxide, silicon nitride, etc.) is explored and developed. Mainly including material deposition, electron beam exposure, UV photolithography, plasma induced coupling (ICP) dry etching, wet etching, evaporation stripping, and so on. The electron beam exposure technology of various kinds of adhesives on various substrates is explored and optimized, and the Bosch step deep etching, synchronous shallow etching, and isotropic etching of silicon on different material systems are developed. High quality waveguide, grating, photonic crystal, micro ring, etc. are prepared by ICP dry etching and wet etching. (2) a single etching vertical grating coupled SOI microring resonator is designed and fabricated. The maximum coupling efficiency of double end grating can reach -8 dB, that is, 40%, 3 dB bandwidth is about 35 nm and the radius is 40 micron m, and the extinction ratio ER is 18 dB, The SOI micro ring resonator has reached the international advanced level. Its bistability and four wave mixing have obvious nonlinear effects. It lays the foundation for low power integrated nonlinear devices. In addition, by introducing MZI structure in the micro ring, using the thermoelectric level modulation MZI double arm and the power consumption of 9.82 mW, the resonant interval of the micro ring resonator is first realized from zero. Continuous adjustable FSR (1.17nm). (3) the focus type high coupling efficiency wide spectrum grating coupler applied to thick Si3N4 thin film is first designed and fabricated. The coupler is combined with inverted cone and focused grating teeth. It has compact structure, simple fabrication, high coupling efficiency, large alignment tolerance and convenient for large area preparation and testing of devices. Couplers The size is 70.2 mu m x 19.7 mu m, the best coupling efficiency -3.7 dB and 1-dB bandwidth 54 nm. (4) have proposed a SU-8 covered etching end coupling scheme. Using the conical conical structure, combined with the method of polymer exposure and end etching, the coupling end of the polymer and fiber is obtained through the electron beam exposure, and the end surface quality is improved and the coupling loss is reduced. The mode coupling loss of the simulated optical field from silicon nitride waveguide to SU-8 waveguide is 0.24 dB. (5). The principle of optical frequency comb generation based on the microring resonator is studied. The C band zero dispersion flat, coupled efficiency controlled Si3N4 microring resonator is designed and fabricated, and LPCVD, electron beam exposure, stripping evaporation and I are used. The silicon nitride microring resonator with different radius and different coupling spacing is prepared by CP dry etching. The resonant amplification of the light intensity and the cascade four wave mixing of the three order nonlinear effect of Si3N4 are used to generate the frequency comb.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TN629.1
[Abstract]:Twenty-first Century is a highly informative age, information transmission, processing and storage are facing more and more high requirements. The traditional electrical interconnection technology is facing the "electronic bottleneck" such as signal delay, power consumption and heat dissipation. The optical interconnection technology has no RC delay, fast transmission rate, anti electromagnetic crosstalk, large transmission bandwidth and low transmission energy consumption. Such advantages are widely used in the field of information processing. Silicon-on-insulator (SOI) has become the hottest low cost and high integration optical interconnection platform because of its advantages of transparent communication band, poor refractive index and fully compatible with standard CMOS (Complementary-Metal-Oxide-Semiconductor) technology. In polysilicon based photonic integrated devices, microring resonators have become the most important basic functional units in photonic integrated circuits, due to the enhancement of specific wavelength resonance, the direction and path of light transmission, the compact structure, the large design freedom and easy integration with other devices. Because of the greater resonance enhancement of the light intensity by the microring resonator, the optical power density in the micro ring is much larger than that in the direct waveguide, and the nonlinear effect will be more significant. This paper has thoroughly studied the working principle and properties of the silicon based microring resonator, and elaborated the design method of the microring resonator. The important process of microring resonator is made, and the optical nonlinear phenomena and optical frequency comb applications in the microring resonator are studied theoretically and experimentally. The research results of this paper can be summarized as follows: (1) the precision micro processing technology based on different material systems (silicon, silicon dioxide, silicon nitride, etc.) is explored and developed. Mainly including material deposition, electron beam exposure, UV photolithography, plasma induced coupling (ICP) dry etching, wet etching, evaporation stripping, and so on. The electron beam exposure technology of various kinds of adhesives on various substrates is explored and optimized, and the Bosch step deep etching, synchronous shallow etching, and isotropic etching of silicon on different material systems are developed. High quality waveguide, grating, photonic crystal, micro ring, etc. are prepared by ICP dry etching and wet etching. (2) a single etching vertical grating coupled SOI microring resonator is designed and fabricated. The maximum coupling efficiency of double end grating can reach -8 dB, that is, 40%, 3 dB bandwidth is about 35 nm and the radius is 40 micron m, and the extinction ratio ER is 18 dB, The SOI micro ring resonator has reached the international advanced level. Its bistability and four wave mixing have obvious nonlinear effects. It lays the foundation for low power integrated nonlinear devices. In addition, by introducing MZI structure in the micro ring, using the thermoelectric level modulation MZI double arm and the power consumption of 9.82 mW, the resonant interval of the micro ring resonator is first realized from zero. Continuous adjustable FSR (1.17nm). (3) the focus type high coupling efficiency wide spectrum grating coupler applied to thick Si3N4 thin film is first designed and fabricated. The coupler is combined with inverted cone and focused grating teeth. It has compact structure, simple fabrication, high coupling efficiency, large alignment tolerance and convenient for large area preparation and testing of devices. Couplers The size is 70.2 mu m x 19.7 mu m, the best coupling efficiency -3.7 dB and 1-dB bandwidth 54 nm. (4) have proposed a SU-8 covered etching end coupling scheme. Using the conical conical structure, combined with the method of polymer exposure and end etching, the coupling end of the polymer and fiber is obtained through the electron beam exposure, and the end surface quality is improved and the coupling loss is reduced. The mode coupling loss of the simulated optical field from silicon nitride waveguide to SU-8 waveguide is 0.24 dB. (5). The principle of optical frequency comb generation based on the microring resonator is studied. The C band zero dispersion flat, coupled efficiency controlled Si3N4 microring resonator is designed and fabricated, and LPCVD, electron beam exposure, stripping evaporation and I are used. The silicon nitride microring resonator with different radius and different coupling spacing is prepared by CP dry etching. The resonant amplification of the light intensity and the cascade four wave mixing of the three order nonlinear effect of Si3N4 are used to generate the frequency comb.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級別】：博士
【學(xué)位授予年份】：2016
【分類號】：TN629.1
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