發(fā)布時(shí)間：2018-05-14 00:32

  本文選題：GaN基LED + 工藝制備�。� 參考：《北京工業(yè)大學(xué)》2015年碩士論文

【摘要】：發(fā)光二極管作為繼白熾燈和熒光燈之后第四代照明光源,具有節(jié)能,環(huán)保和壽命長(zhǎng)的特點(diǎn)。已從最初的景觀照明、交通信號(hào)顯示等領(lǐng)域,開(kāi)始進(jìn)入液晶背光和普通室內(nèi)外照明領(lǐng)域,成為當(dāng)代信息社會(huì)“增光添彩”不可或缺的關(guān)鍵元器件,在農(nóng)業(yè)、醫(yī)療等眾多新興的應(yīng)用市場(chǎng)也逐漸發(fā)展起來(lái)。GaN基LED性能近年來(lái)的快速提升,出現(xiàn)了很多新型LED。本論文圍繞GaN基功率和高壓發(fā)光二極管制備和測(cè)試分析開(kāi)展研究,主要研究?jī)?nèi)容如下:(1)對(duì)GaN基高壓LED關(guān)鍵工藝進(jìn)行了研究和分析。具體分析了影響ICP深槽刻蝕的因素;分析了不同掩膜對(duì)深槽臺(tái)階形貌的影響;分析了ITO腐蝕不干凈對(duì)ICP刻蝕產(chǎn)生的影響,以及對(duì)LED器件的影響;分析了不同電極材料和結(jié)構(gòu)對(duì)LED器件的影響。(2)制備了12V藍(lán)光高壓LED,進(jìn)行了25℃-60℃變溫實(shí)驗(yàn)和測(cè)試,結(jié)果表明藍(lán)光芯片的光通量隨溫度升高呈下降趨勢(shì);隨著溫度的升高,正向電壓變小,發(fā)光效率增大。說(shuō)明俄歇復(fù)合不是導(dǎo)致GaN基LED光衰減的主要原因,溫度的變化對(duì)材料的影響不同。(3)設(shè)計(jì)并制備了12VGaN基綠光高壓LED,并對(duì)其經(jīng)過(guò)了一系列反向人體模式靜電打擊后的測(cè)試和變電流的測(cè)試。LED樣品受到較大的反向電壓靜電打擊后,幾乎失去了PN結(jié)的特性,這時(shí)LED樣品失效,得出靜電打擊對(duì)GaN基高壓LED和普通LED器件影響相同。(4)對(duì)色溫為2700K、3000K、4000K、5500K的LED器件進(jìn)行了25-900mA的變電流實(shí)驗(yàn),測(cè)試溫度25℃,隨著注入電流增大,LED的光通量上升速率逐漸下降,光效先上升后迅速下降,是由于從局域態(tài)中溢出的電子發(fā)生了非輻射復(fù)合導(dǎo)致的;顯色指數(shù)上升了30%-35%,藍(lán)光輻射量增加,熒光粉轉(zhuǎn)換效率下降(5)分別選取A、B兩公司1W白光以及A公司1W藍(lán)光功率LED為樣品,進(jìn)行了在350mA,溫度為-35oC度,時(shí)間2250小時(shí)的低溫老化試驗(yàn)。LED樣品的光通量和光效均呈不斷衰減趨勢(shì),雖然下降程度不同,但總體趨勢(shì)是一樣的。藍(lán)光器件樣品光通維持率全部高于白光器件。所有器件電壓,也均隨時(shí)間增加呈小幅上升趨勢(shì),正向電壓上升會(huì)出現(xiàn)色彩失真,會(huì)產(chǎn)生色差,在使用中應(yīng)盡量考慮環(huán)境溫度過(guò)低對(duì)LED的影響,依照實(shí)際要求來(lái)選擇不同參數(shù)的LED,以達(dá)到提高能效、節(jié)約能源的目的。
[Abstract]:As the fourth generation lighting source after incandescent lamp and fluorescent lamp, LED has the characteristics of energy saving, environmental protection and long life. From the original landscape lighting, traffic signal display and other fields, began to enter the field of LCD backlight and ordinary indoor and outdoor lighting, become the modern information society "add light" indispensable key components in agriculture, The performance of GaN-based LED has been improved rapidly in recent years, and a lot of new LEDs have emerged. This thesis focuses on the fabrication and testing of GaN based power and high voltage light-emitting diodes. The main research contents are as follows: 1) the key processes of GaN based high voltage LED are studied and analyzed. The factors influencing the deep groove etching of ICP are analyzed, the influence of different masks on the appearance of deep grooves step, the influence of ITO corrosion on ICP etching and the influence on LED devices are analyzed. The effects of different electrode materials and structures on LED devices were analyzed. The 12V blue light high-voltage LEDs were prepared. The experiments and tests were carried out at 25 鈩，

本文編號(hào)：1885540