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  本文關(guān)鍵詞： CdS Al薄膜 射頻磁控濺射 CdTe太陽電池　出處：《無機(jī)材料學(xué)報》2017年04期 　論文類型：期刊論文

【摘要】：采用Al和CdS雙靶共濺射的方法,調(diào)控Al和CdS源的沉積速率,制備出不同Al摻雜濃度的CdS:Al薄膜。通過XRD、SEM、AFM、紫外 可見透射光譜分析、常溫霍爾測試對CdS:Al薄膜的結(jié)構(gòu)、形貌、光學(xué)和電學(xué)性質(zhì)進(jìn)行表征。XRD結(jié)果表明,不同Al摻雜濃度的CdS:Al薄膜均為六方纖鋅礦結(jié)構(gòu)的多晶薄膜,并且在(002)方向擇優(yōu)生長。SEM和AFM結(jié)果表明,CdS:Al薄膜的表面均勻致密,表面粗糙度隨著Al摻雜濃度的增加略有增加。紫外 可見透射光譜分析表明,CdS:Al薄膜禁帶寬度在2.42~2.46 eV之間,隨著Al摻雜濃度的增加而略微減小。常溫霍爾測試結(jié)果證明,摻Al對CdS薄膜的電學(xué)性質(zhì)影響顯著,摻Al原子濃度3.8%以上的CdS薄膜,載流子濃度增加了3個數(shù)量級,電阻率下降了3個數(shù)量級。摻Al后的CdS薄膜n型更強(qiáng),有利于與CdTe形成更強(qiáng)的內(nèi)建場,從而提高太陽電池效率。用濺射方法制備的CdS:Al薄膜的性質(zhì)適合用作CdTe薄膜太陽電池的窗口層。
[Abstract]:Different Al doped CdS:Al thin films were prepared by Al and CdS double target co-sputtering, and the deposition rate of Al and CdS sources was regulated. The structure, morphology, optical and electrical properties of CdS:Al thin films were characterized by UV-Vis transmission spectroscopy and Hall test at room temperature. The CdS:Al films with different Al doping concentrations are polycrystalline with hexagonal wurtzite structure, and the preferred growth direction is in the direction of 002. The results of SEM and AFM show that the films are polycrystalline with hexagonal wurtzite structure. The surface of CdS:Al thin films is uniform and dense, and the surface roughness increases slightly with the increase of Al doping concentration. The band gap of CdS:Al thin films is between 2.42 and 2.46 EV, which decreases slightly with the increase of Al doping concentration. Al-doped CdS films have a significant effect on the electrical properties. The carrier concentration of CdS films with Al atom concentration above 3.8% increases by three orders of magnitude. The resistivity decreases by three orders of magnitude. The n-type CdS films doped with Al have stronger n-type, which is beneficial to the formation of a stronger built-in field with CdTe. In order to improve the efficiency of solar cells, the properties of CdS:Al thin films prepared by sputtering are suitable for the window layer of CdTe thin film solar cells.
【作者單位】： 四川大學(xué)材料科學(xué)與工程學(xué)院;
【基金】：國家高技術(shù)研究發(fā)展計劃(863計劃)(2015AA050610)~~
【分類號】：TB383.2;TM914.4
【正文快照】： Cd S是化學(xué)性能穩(wěn)定的寬禁帶半導(dǎo)體材料,在可見光范圍內(nèi)具有較高的透光性,在薄膜太陽能電池中常常作為n型窗口層和緩沖層材料,與p型Cd Te形成異質(zhì)結(jié)太陽電池[1-2]。同時Cd S還具有優(yōu)異的光電轉(zhuǎn)換和發(fā)光性能,在紅外探測、發(fā)光二極管、傳感器和光電顯示器件等領(lǐng)域也有廣泛應(yīng)用[3

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本文編號：1457543