界面修飾層對(duì)有機(jī)太陽能電池的性能影響研究
[Abstract]:Organic solar cells have many advantages, such as simple preparation process, high portability, low cost, and large-area film-forming. They have attracted more and more attention in the environment today, and have been developed rapidly in the last two decades. However, they are still inefficient in energy conversion. The interface modification layer is an important factor affecting the energy conversion efficiency, lifetime and device stability of organic solar cells. The main purpose of this paper is to improve the energy conversion efficiency of devices. The effects of interfacial modification layers on the conversion efficiency of the devices are studied systematically in this paper. The main research contents can be divided into the following four aspects: (1) Small molecule organic solar cells with Mg:Ca:Al alloy cathode are studied. The device performance is optimized by changing the doping ratio of Mg in the alloy cathode, and the device with optimized superalloy cathode is modified. The influence of BPhen as cathode buffer layer on device performance was studied. It was found that the introduction of BPhen formed a good contact between the active layer and the metal cathode, which effectively improved the transmission efficiency of electrons and the cathode collection efficiency. At the same time, the quenching of photoexcitons was reduced and the energy of the device was improved. When the thickness of BPhen film is 10 nm, the maximum energy conversion efficiency of the device is 0.96%, which is 88.24% higher than that of the device without cathode buffer layer. At this time, the open circuit voltage is 0.34 V, the short circuit current is 6.90 mA. cm-2, and the filling factor is 0.41. (2) The CuPc: C60 and NPB: C60 heterojunction organic solar cells are studied. The experimental results show that the performance of bulk heterojunction device is much better than that of planar heterojunction device. The structure of the device is optimized by changing the doping ratio of CuPc and NPB. The effect of BPhen as cathode buffer layer on the performance of the device is studied. Buffer layer acts as a barrier to excitons, reduces the probability of photogenerated carrier quenching and effectively improves the device performance. For bulk heterojunction devices with CuPc/CuPc:C60/C60 structure, the energy conversion efficiency is increased from 0.28% to 0.63% by introducing cathode buffer layer BPhen; for CuPc/NPB:C60/C60 structure, the energy conversion efficiency is increased from 0.28% to 0.63%. (3) Organic solar cells with cathode buffer layer Alq3 were studied. The experimental results show that Alq3 has good electron transfer ability, and because of its introduction as cathode buffer layer, the active layer contacts with metal cathode, and the electron carrier transfer efficiency is improved. The experimental results show that when the thickness of Alq3 film is 3 nm, the energy conversion efficiency of the device is 0.48%. Compared with the same structure device without cathode buffer layer, the energy conversion efficiency of the device is improved by 71.4%. The open-circuit voltage of the device is 0.25 V, the short-circuit current is 4.03 mA cm-2 and the filling current is 4.03 mA cm-2. Factor 0.47. (4) A small molecular organic solar cell with ITO/Cu Pc/CuPc:C60/C60/BPhen/Al structure with NPB, MoO_3 and V2O5 as anode buffer layers was studied. The experimental results show that the introduction of NPB and MoO_3 not only improves the performance of the device, but also affects the energy conversion efficiency of the device. The surface roughness of ITO decreases, which is beneficial to the formation of good ohmic contact between ITO and active layer, thus increasing the open-circuit voltage of the device. At the same time, as an anode buffer layer, V2O5 effectively suppresses the leakage current, reduces the probability of carrier recombination, and thus improves the short-circuit current of the device. At 5 nm, the maximum energy conversion efficiency of the device is 0.79%, which is 25.4% higher than that of the same structure device with anode buffer layer.
【學(xué)位授予單位】:陜西科技大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2017
【分類號(hào)】:TM914.4
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