ALICE ITS單片式有源像素傳感器的低噪聲前端電子學(xué)的研究與實現(xiàn)
[Abstract]:During the second stop operation of LHC in 2019, ALICE will upgrade its internal track detector ITS. In the track detector, reducing noise can not only effectively improve the accuracy of energy measurement, but also improve the detection efficiency. Therefore, low noise is one of the important indicators of the ITS upgrade. Electronics is integrated on the same silicon chip, with small input capacitance, low quality, easy installation and so on. Therefore, ALICE ITS upgrade will use a single chip active pixel detector. Under certain power and bandwidth conditions, reducing the input capacitance and feedback capacitance of front end electronics can reduce the noise effectively. Therefore, this paper proposes a low noise front end circuit. Four noise reduction methods: 1), the new source drain pole follower circuit structure, 2), the small capacity feedback capacitance is realized with the parasitic capacitance between the two layers of wire, and the discrete capacitance of each pixel is reduced by means of increasing the distance and area and changing the capacitance structure. 3), the Monte Carlo simulation is used to realize the small area constraint conditions. To reduce the charge threshold discreteness caused by the inconsistency of transistor inconsistencies among different pixels, thus reducing the noise caused by the discretization of the charge threshold between different pixels; 4) reducing the voltage gain of the input gate leakage by increasing the common source gate transistor, thus reducing the discretization of the Miller equal effective capacitance between different pixels and further reducing the charge between different pixels. The content and innovation of this paper are mainly reflected in the following aspects: 1, a new circuit structure of source drain follower is proposed, which reduces the input capacitance of the amplifier and reduces the noise. Compared with the single amplifier, the source follower has no parasitic capacitance between the gate source of the input transistor and the input capacitance of the amplifier. The contribution thus has a larger charge voltage conversion gain, which is widely used in single chip active pixel detector charge readout. However, the traditional two tube structure source follower still has the contribution of the input gate leakage parasitic capacitance to the input capacitance, in order to eliminate the contribution of the input gate leakage capacitance to the input capacitance and thus reduce the noise. In this paper, a new type of five tube structure source drain follower is proposed. The source and drain are all followed by the grid potential. The contribution of the input transistor gate and the gate leakage parasitic capacitance to the input capacitance is eliminated, and the input capacitance is further reduced, and the voltage gain is closer to 1 than the traditional source follower, thus increasing the charge voltage. The new source drain follower circuit has been integrated in the monolithic active pixel detector chip INVESTIGATOR, and the circuit test results conform to the expectation. At the same time, the chip also reduces the PN junction capacity by increasing the reverse bias voltage of the sensor PN junction, and further reduces the noise.INVESTIGATOR using 55Fe. The test results show that when the reverse bias voltage of PN junction is increased from 0V to -6V, the PN junction capacitance is reduced by 49%, that is, from 5.96 fF to 3.04fF, and the equivalent input noise charge decreases by 36%, that is, from 80e- to 51 e-, and the circuit input capacitance of the new source drain follower circuit is reduced by 9% than that of the traditional source follower circuit. From 3.04fF to 2.76 fF, the equivalent input noise charge is reduced by 25%, which is reduced from 51e- to 38e-.2, and a small capacity feedback capacitance is realized with the parasitic capacitance between the two layers of the wire. The capacitance of each pixel is reduced by increasing the distance and area and the capacitance structure is changed to increase the charge voltage conversion gain. To improve the signal to noise ratio of the circuit, the charge sensitive preamplifier can gain high conversion gain and reduce the noise by reducing the feedback capacitance. Therefore, a small capacity feedback capacitance is realized by two layer walk Wire parasitic capacitance, and the discretization of the feedback capacitance between different pixels is reduced by two methods: one is the non adjacent two. The layer metal increases the distance and area of the feedback capacitance, and the second is to reduce the influence of the edge effect on the capacitance of the feedback capacitance by changing the capacitance structure. This feedback capacitance has been applied to the design of the front end electronics of the monolithic active pixel detector chip pA_LP. The simulation results show that the second layers of wire and fourth layers of wire are solid. The feedback capacitance of 0.2fF is presented. When the charge sensitive preamplifier is at the peak time of 300ns, the equivalent input noise charge is about 18e-, and the power consumption of each pixel is only 45 nW.3. By Monte Carlo simulation, the discrete charge threshold caused by the inconsistency of the transistors between different pixels is reduced by the Monte Carlo simulation. This method has been applied to the optimization of the discreteness of the charge threshold between different pixels in the front-end electronics of the monolithic active pixel detector chip ALPIDE. The ALPIDE front-end electronics is an open loop charge readout circuit, consisting of an amplifier and a current comparator, and the maximum layout area is limited to 220 The contribution of each transistor to the discretization of the charge threshold between different pixels is analyzed by Monte Carlo simulation. According to its contribution, the transistor size is optimized, which reduces the discretization of the charge threshold caused by the inconsistency of transistors between different pixels. The simulation results show that the optimized front-end electronics is composed of transistors with different pixels. The discretization of the charge threshold caused by inconsistency decreases by 67%, that is, from 6.10e- to 1.99e-, and at the same time, the random noise is reduced by 9%, which is reduced from 3.70e- to 3.37e-.4. By increasing the common source gate transistor, the voltage gain of the gate leakage between the input transistors is reduced, thus the discretization of the Miller equivalent capacitance between different pixels is reduced and the charge threshold is further reduced. This method has been applied to the optimization of the discreteness of the charge threshold between different pixels in the ALPIDE front-end electronics. A common source transistor is added to the drain pole of the second stage current comparator, which reduces the voltage gain between the gate leakage of the current comparator input tube, and thus reduces the parasitic capacitance of the second stage input gate leakage. The simulation results show that the charge threshold discretization of the optimized front-end electronics decreases by 73%, which is caused by the disagreement of the parasitic capacitance of the second level input transistor gate leakage, that is, the front end readout circuit from 2.19 e-/0.1fF to the 0.59e-/0.1fF. optimization has been integrated into the ALPIDE detector. Each pixel consumes only 40 nW of analog power dissipation, and the ALPIDE chip will eventually be used in the ALICE ITS upgrade detector.
【學(xué)位授予單位】:華中師范大學(xué)
【學(xué)位級別】:博士
【學(xué)位授予年份】:2016
【分類號】:TP212
【相似文獻】
相關(guān)期刊論文 前10條
1 董瑞軍;探針輸入電容對測量精度的影響[J];國外電子測量技術(shù);1996年02期
2 黃樹新,陳福元;V-MOS功率晶體管反饋電容和輸入電容的測量[J];半導(dǎo)體技術(shù);1982年06期
3 衡草飛,向軍利,李肇基,張波,羅萍;Power MOSFET柵電荷分析及結(jié)構(gòu)改進[J];電子質(zhì)量;2004年09期
4 Bryan.Down. ,安秋順;在場效應(yīng)晶體管電路中利用反饋減小輸入電容[J];電測與儀表;1972年07期
5 劉平;喬永輝;焦彥明;;MOSFET輸入電容對功放驅(qū)動電路的影響[J];通信技術(shù);2009年09期
6 任艷頻;;示波器輸入電容對上限截止頻率測量的影響[J];北華航天工業(yè)學(xué)院學(xué)報;2011年04期
7 段力軍;對VN系列VMOS功率場效應(yīng)管輸入電容的改善設(shè)計[J];半導(dǎo)體技術(shù);1987年05期
8 趙寶仲;用正向偏置改善精度的整流器[J];電子技術(shù)應(yīng)用;1987年07期
9 L.Leipold,J.Tihanyi,蔡永才;具有集成輸入放大器的高阻塞電壓功率MOSFET的實驗研究[J];微電子學(xué);1986年06期
10 ;[J];;年期
相關(guān)會議論文 前1條
1 任艷頻;;示波器輸入電容對上限截止頻率測量的影響[A];2011年全國高等學(xué)校電子技術(shù)研究會論文集[C];2011年
相關(guān)重要報紙文章 前1條
1 四川 溫成宜 摘譯;超聲波清洗用300瓦E類放大器(上)[N];電子報;2008年
相關(guān)博士學(xué)位論文 前1條
1 高超嵩;ALICE ITS單片式有源像素傳感器的低噪聲前端電子學(xué)的研究與實現(xiàn)[D];華中師范大學(xué);2016年
,本文編號:2150478
本文鏈接:http://www.wukwdryxk.cn/shoufeilunwen/xxkjbs/2150478.html