發(fā)布時間：2018-12-12 20:42

【摘要】：根據(jù)絕緣柵雙極型晶體管(IGBT)器件工作時的傳熱原理,運用基于有限元法的分析軟件ANSYS建立了1種IGBT三維熱模型,進行瞬態(tài)仿真及結(jié)構(gòu)函數(shù)分析�；�于結(jié)構(gòu)函數(shù)分析所得的熱阻熱容曲線,從芯片和焊料層接觸面積、焊料層厚度、銅基板厚度和焊料層空洞等角度分析了可能影響器件熱特性的因素。研究結(jié)果表明,相比傳統(tǒng)的半導(dǎo)體器件熱阻測試方法,結(jié)構(gòu)函數(shù)法不僅能獲得器件結(jié)到周圍環(huán)境總體熱阻值,還能無損地獲取器件內(nèi)部各結(jié)構(gòu)層的熱阻熱容,分析器件內(nèi)部結(jié)構(gòu)變化,為研究和評估器件的熱特性提供可靠的依據(jù)。
[Abstract]:According to the heat transfer principle of insulated gate bipolar transistor (IGBT) devices, a three-dimensional thermal model of IGBT is established by using the finite element analysis software ANSYS, and the transient simulation and structure function analysis are carried out. Based on the thermal resistance and heat capacity curves obtained by structural function analysis, the factors that may affect the thermal characteristics of the device are analyzed from the aspects of the contact area of chip and solder layer, the thickness of copper substrate and the solder layer cavity. The results show that compared with the traditional thermal resistance measurement method, the structure function method can not only obtain the total thermal resistance of the device junction to the surrounding environment, but also obtain the thermal resistance and heat capacity of each structure layer of the device without damage. The analysis of the internal structure of the device provides a reliable basis for the study and evaluation of the thermal characteristics of the device.
【作者單位】： 北京工業(yè)大學(xué)電子信息與控制工程學(xué)院;
【分類號】：TN322.8

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