a国产,中文字幕久久波多野结衣AV,欧美粗大猛烈老熟妇,女人av天堂

當前位置:主頁 > 科技論文 > 電子信息論文 >

多孔硅氣敏特性研究

發(fā)布時間:2018-12-15 23:20
【摘要】:多孔硅材料具有制備工藝簡單、成本低、易于集成化、對環(huán)境污染小等特點,可以用于檢測各類氧化性氣體(如N02)和還原性氣體(如CO),是目前熱門的研究氣敏材料之一,其中提高多孔硅表面硅排列的均勻度是提高多孔硅材料靈敏度的主要途徑。本文采用雙槽電化學(xué)法制備多孔硅,并對制備的多孔硅表面形貌進行分析,研究了多孔硅層對乙醇氣體氣敏特性的影響,簡要分析了其氣敏機理,得到下列結(jié)果:1.利用自制雙槽電化學(xué)腐蝕法成功的制備納米級孔徑的多孔硅層。分析表明:在高電阻率1-10Ω·cm和低電阻率0.001-0.0016Ω·cm硅片上制備的多孔硅,孔隙率隨著電流密度的增加呈現(xiàn)先增加后減小的特點,且在電流密度40mA/cm2時孔隙率得到最大。電阻率0.01-0.02Ω·cm的硅片上制備的多孔硅,孔隙率隨著電流密度增加而增大。2.分別對三組多孔硅表面進行多孔硅形貌分析。分析表明:電阻率0.01-0.02Ω·cm的硅片上制備的多孔硅比其他兩組均勻性更好,孔徑較小,孔深較深。在40mA/cm2時,表面形貌均勻性最佳。3.研究了電阻率0.01-0.02Ω·cm硅片上制備的多孔硅層對不同濃度乙醇還原性氣體的氣敏性能。結(jié)果表明:表面均勻性較差的兩組樣品氣敏特性不穩(wěn)定,均勻度較好的其他三個樣品的氣敏性能穩(wěn)定。在電流密度在40mA/cm2下制備的多孔硅對各濃度的乙醇氣體的靈敏度相對穩(wěn)定,均值達到2.24。
[Abstract]:Porous silicon has the advantages of simple preparation process, low cost, easy integration, low environmental pollution and so on. It can be used to detect various oxidizing gases (such as N02) and reductive gases (such as CO),). The main way to improve the sensitivity of porous silicon is to improve the uniformity of silicon arrangement on porous silicon surface. In this paper, porous silicon was prepared by two-cell electrochemical method. The surface morphology of porous silicon was analyzed. The effect of porous silicon layer on the gas sensing characteristics of ethanol was studied. The gas sensing mechanism of porous silicon was briefly analyzed, and the following results were obtained: 1. The porous silicon layer with nanometer pore size was successfully prepared by self-made double-cell electrochemical etching method. The results show that the porosity of porous silicon prepared on high resistivity 1-10 惟 cm and low resistivity 0.001-0.0016 惟 cm wafers increases first and then decreases with the increase of current density. The porosity is maximum at current density 40mA/cm2. The porosity of porous silicon prepared on the wafer with resistivity 0.01-0.02 惟 cm increases with the increase of current density. The morphologies of porous silicon on the surface of three groups of porous silicon were analyzed respectively. The results show that the porous silicon prepared on the wafer with resistivity of 0.01-0.02 惟 cm has better homogeneity, smaller pore size and deeper pore depth than the other two groups. In 40mA/cm2, the surface morphology is the best. 3. 3. The gas-sensing properties of porous silicon layer prepared on 0.01-0.02 惟 cm wafer with different concentrations of ethanol reductive gases were studied. The results show that the gas sensitivity of the two groups of samples with poor surface uniformity is unstable, and that of the other three samples with good uniformity is stable. The sensitivity of porous silicon prepared at current density at 40mA/cm2 to ethanol gas at different concentrations is relatively stable, with a mean value of 2.24.
【學(xué)位授予單位】:合肥工業(yè)大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN304.12

【相似文獻】

相關(guān)期刊論文 前10條

1 孫甲明,張吉英,申德振,范希武;多孔硅的電荷存貯特性與光電壓滯后衰減[J];發(fā)光學(xué)報;1993年02期

2 楊海強,鮑希茂,楊志鋒,洪建明;用離子注入控制形成多孔硅發(fā)光圖形[J];半導(dǎo)體學(xué)報;1993年12期

3 范洪雷,侯曉遠,李U喩,怔tα崦,蛙],

本文編號:2381451


資料下載
論文發(fā)表

本文鏈接:http://www.wukwdryxk.cn/kejilunwen/dianzigongchenglunwen/2381451.html


Copyright(c)文論論文網(wǎng)All Rights Reserved | 網(wǎng)站地圖 |

版權(quán)申明:資料由用戶47275***提供,本站僅收錄摘要或目錄,作者需要刪除請E-mail郵箱bigeng88@qq.com
国产精品亚洲一区二区在线观看| 狠狠躁夜夜躁人人爽天天天天97 | 亚洲午夜无码久久久久软件| 人妻日韩精品中文字幕| 免费日韩精品一区二区三区在线观看 | 亚洲毛片不卡av在线播放一区| 久久精品国产99精品最新| 日韩欧美一区二区三区久久婷婷| 水蜜桃一三三三区| 亚洲国产一区二区精品专区发布| 国产精品欧美福利久久| 亚洲欧洲一区二区三区网久久| 丰满人妻熟妇乱又伦精品| 无码专区久久综合久中文字幕| 呈贡县| 精品人伦一区二区三区蜜桃牛牛| 亚洲av吞精久久久久| 国产精品成人3p一区二区三区 | 国产精品自在欧美一区| 亚欧色一区W666天堂| 久久综合九色综合欧美98| 娇小萝被两个黑人用半米长| 天天摸夜夜添狠狠添高潮出水| 精品国产一区二区三区香蕉| 高中生被C到爽哭视频| 99热最新| 国产综合一区二区三区| www.亚洲一区| 亚洲| 熟妇高潮精品一区二区三区| 性按摩| 国产99久久久国产精品| brazzershd欧美丝袜荡| 欧美军人巨大粗爽gay| 漂亮人妻被强了中文字幕久久| 久青草影院| 四川少妇BBW搡BBBB槡BBBB| 插我舔内射18免费视频| 亚洲理论在线a中文字幕| 久久亚洲精品无码VA大香大香| 亚洲欧美成人综合久久久|