發(fā)布時(shí)間：2018-12-17 17:27

【摘要】：針對(duì)45 nm MOSFET射頻等效電路建模和參數(shù)提取技術(shù)進(jìn)行了研究,在精確地提取了射頻小信號(hào)模型參數(shù)之后,基于雙端口網(wǎng)絡(luò)的噪聲相關(guān)矩陣和多端口噪聲理論,使用本征電路的噪聲電流源嵌入有噪聲貢獻(xiàn)的元件,從而分析推導(dǎo)出射頻噪聲參數(shù)模型,并與商用的45 nm CMOS射頻測(cè)量值相對(duì)比,在相應(yīng)的頻段內(nèi)顯示出很好的正確性。
[Abstract]:The modeling and parameter extraction techniques of 45 nm MOSFET RF equivalent circuit are studied. After accurate extraction of RF small-signal model parameters, the noise correlation matrix based on two-port network and the multi-port noise theory are proposed. The noise current source of the intrinsic circuit is used to embed the element with noise contribution, and the RF noise parameter model is analyzed and deduced, and compared with the commercial 45 nm CMOS radio frequency measurement value, it shows a good correctness in the corresponding frequency band.
【作者單位】： 西南科技大學(xué)信息工程學(xué)院;
【分類號(hào)】：TN386.1
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本文編號(hào)：2384558