基于GaN的Ka波段功率放大器設(shè)計(jì)及熱分析
發(fā)布時(shí)間：2018-12-19 18:44
【摘要】：本文主要研究了基于GaN材料的高頻功率放大器的設(shè)計(jì)，以及基本的熱分析理論，闡述了熱分析在功率放大器設(shè)計(jì)過(guò)程中的必要性。功率放大器是T/R組件的核心部分，相控陣?yán)走_(dá)的發(fā)展對(duì)T/R組件的性能要求越來(lái)越高，每組T/R模塊都具有獨(dú)立的接收發(fā)射功能，任何一組T/R模塊的損壞都不會(huì)影響其他模塊的工作，這必然將提升系統(tǒng)工作的穩(wěn)定性。因此T/R模塊本身性能就決定著整機(jī)工作性能，一方面我們希望T/R模塊的性能不斷提升，另一方面我們希望盡可能降低T/R模塊的體積，降低成本，以使整機(jī)朝著小型化的方向發(fā)展。 T/R模塊具有接收發(fā)射功能，它的組成部件有濾波器、混頻器、放大器、低噪放等，本文緊緊圍繞Ka波段研制設(shè)計(jì)功率放大器，鑒于材料對(duì)放大器性能的影響，研制中使用性能頗佳的GaN材料，不論在電子漂移速度方面，還是在擊穿電壓和禁帶寬度等方面，GaN材料都表現(xiàn)出巨大的優(yōu)勢(shì)，成為設(shè)計(jì)高頻段功率放大器的最佳選擇。為實(shí)現(xiàn)小型化，我們采用單片集成技術(shù)，這一技術(shù)不但能大大降低生產(chǎn)成本，而且放大器的穩(wěn)定性高、輸出功率大。但是同時(shí)也將產(chǎn)生另外一個(gè)重要的問(wèn)題，功率放大器在T/R模塊中是最主要的熱源，管芯集電結(jié)產(chǎn)生的熱量源源不斷地釋放出來(lái)，這部分熱量如果不能得到有效的釋放控制，勢(shì)必會(huì)影響T/R模塊的工作以及整機(jī)性能，因此就必須對(duì)功率放大器以及T/R模塊進(jìn)行熱分析。 本文首先設(shè)計(jì)仿真出35-37GHz工作頻帶的功率放大器，其輸出功率大于34dBm，功率附加效率大于12%，增益高于9dB，帶內(nèi)增益平坦度小于1.0dB，已達(dá)到了最初的設(shè)計(jì)指標(biāo)。因MMIC芯片最終需要在LTCC基板上安裝來(lái)構(gòu)建T/R組件，在這個(gè)過(guò)程中就要解決芯片的散熱問(wèn)題。本文在給出三種MMIC裝配模型之后，運(yùn)用ANSYS對(duì)三種裝配模型依次進(jìn)行了熱仿真分析，從而找出最佳的散熱裝配模型。裝配模型確定之后，影響其散熱性能的主要是熱通孔的布局，，以及通孔尺寸和孔間距。為進(jìn)一步提高散熱性能，文章對(duì)散熱通孔布局不同的幾種模型進(jìn)行了熱仿真分析，最終確定了散熱性能與熱通孔布局的關(guān)系。完成這些工作，就為后期MMIC流片成功實(shí)現(xiàn)裝配提供了指導(dǎo)。
[Abstract]:This paper mainly studies the design of high-frequency power amplifier based on GaN material, and the basic thermal analysis theory, and expounds the necessity of thermal analysis in the design of power amplifier. the power amplifier is a core part of the T/ R component, the development of the phased array radar is higher and higher for the performance requirements of the T/ R component, each group of T/ R modules has independent receiving and transmitting functions, the damage of any group of T/ R modules does not affect the operation of other modules, This will inevitably improve the stability of the system's work. Therefore, the performance of the T/ R module determines the working performance of the whole machine. On the one hand, we hope the performance of the T/ R module is increasing, on the other hand, we want to reduce the volume of the T/ R module as much as possible, and reduce the cost, so as to make the whole machine develop in the direction of miniaturization. The T/ R module has the function of receiving and transmitting, its components are filter, mixer, amplifier, low-noise amplifier and so on. In this paper, the design power amplifier is designed around the Ka-band. In view of the influence of the material on the performance of the amplifier, the GaN material with excellent performance is developed. In terms of the speed of electron drift, or in terms of the breakdown voltage and the width of the forbidden band, the GaN material has a great advantage and becomes the best choice for designing high-band power amplifier In order to achieve the miniaturization, we adopt a single-chip integration technology, which not only can greatly reduce the production cost, but also the amplifier has high stability and output power. but at the same time there will be another important problem that the power amplifier is the main heat source in the t/ r module, the heat generated by the die collector junction is continuously released, The system is bound to influence the operation of the T/ R module and the performance of the complete machine. Therefore, the power amplifier and the T/ R module must be thermally separated In this paper, the power amplifier of 35-37GHz operating band is designed and simulated. The output power of the power amplifier is greater than 34dBm, the power additional efficiency is more than 12%, the gain is higher than 9dB, and the flatness of the band is less than 1. 0dB, and the initial setting has been achieved. The meter indicator. The MMIC chip will eventually need to be installed on the LTCC substrate to build the T/ R assembly, which will address the bulk of the chip in this process In this paper, after three kinds of MMIC assembly models are given, the thermal simulation analysis of three kinds of assembly models is carried out by using the ANSYS, so as to find out the best heat dissipation. The distribution model. After the assembly model is determined, the heat dissipation performance is mainly affected by the layout of the hot through hole, and the size of the through hole and the size of the through hole. In order to further improve the heat dissipation performance, the paper makes a thermal simulation analysis on several models with different layout of the heat dissipation through holes, and finally, the heat dissipation performance and the thermal through hole layout are determined. Relationship. Complete these tasks and provide for successful assembly of the later MMIC flow sheet
【學(xué)位授予單位】：北京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN722.75
本文編號(hào)：2387306
[Abstract]:This paper mainly studies the design of high-frequency power amplifier based on GaN material, and the basic thermal analysis theory, and expounds the necessity of thermal analysis in the design of power amplifier. the power amplifier is a core part of the T/ R component, the development of the phased array radar is higher and higher for the performance requirements of the T/ R component, each group of T/ R modules has independent receiving and transmitting functions, the damage of any group of T/ R modules does not affect the operation of other modules, This will inevitably improve the stability of the system's work. Therefore, the performance of the T/ R module determines the working performance of the whole machine. On the one hand, we hope the performance of the T/ R module is increasing, on the other hand, we want to reduce the volume of the T/ R module as much as possible, and reduce the cost, so as to make the whole machine develop in the direction of miniaturization. The T/ R module has the function of receiving and transmitting, its components are filter, mixer, amplifier, low-noise amplifier and so on. In this paper, the design power amplifier is designed around the Ka-band. In view of the influence of the material on the performance of the amplifier, the GaN material with excellent performance is developed. In terms of the speed of electron drift, or in terms of the breakdown voltage and the width of the forbidden band, the GaN material has a great advantage and becomes the best choice for designing high-band power amplifier In order to achieve the miniaturization, we adopt a single-chip integration technology, which not only can greatly reduce the production cost, but also the amplifier has high stability and output power. but at the same time there will be another important problem that the power amplifier is the main heat source in the t/ r module, the heat generated by the die collector junction is continuously released, The system is bound to influence the operation of the T/ R module and the performance of the complete machine. Therefore, the power amplifier and the T/ R module must be thermally separated In this paper, the power amplifier of 35-37GHz operating band is designed and simulated. The output power of the power amplifier is greater than 34dBm, the power additional efficiency is more than 12%, the gain is higher than 9dB, and the flatness of the band is less than 1. 0dB, and the initial setting has been achieved. The meter indicator. The MMIC chip will eventually need to be installed on the LTCC substrate to build the T/ R assembly, which will address the bulk of the chip in this process In this paper, after three kinds of MMIC assembly models are given, the thermal simulation analysis of three kinds of assembly models is carried out by using the ANSYS, so as to find out the best heat dissipation. The distribution model. After the assembly model is determined, the heat dissipation performance is mainly affected by the layout of the hot through hole, and the size of the through hole and the size of the through hole. In order to further improve the heat dissipation performance, the paper makes a thermal simulation analysis on several models with different layout of the heat dissipation through holes, and finally, the heat dissipation performance and the thermal through hole layout are determined. Relationship. Complete these tasks and provide for successful assembly of the later MMIC flow sheet
【學(xué)位授予單位】：北京理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN722.75
【參考文獻(xiàn)】
相關(guān)期刊論文 前6條
1 默江輝;蔡樹(shù)軍;;GaN基HEMT場(chǎng)板結(jié)構(gòu)研究進(jìn)展[J];半導(dǎo)體技術(shù);2006年06期
2 王東方;劉新宇;;Ka波段AlGaN/GaN HEMT柵結(jié)構(gòu)仿真研究[J];電子器件;2009年05期
3 余為國(guó);楊傳仁;陳宏偉;婁非志;張繼華;;氮化硅薄膜MIM電容器的制備與性能研究[J];電子元件與材料;2010年05期
4 薛勇健，孫先花;基于精確模型的毫米波單片集成電路設(shè)計(jì)[J];半導(dǎo)體情報(bào);1996年02期
5 ;AUTHOR INDEX of J.Infrared and Millimeter Waves Vol.21(2002)[J];紅外與毫米波學(xué)報(bào);2002年06期
6 汪晶慧;林維明;洪翠;;矩形螺旋集成電感的仿真分析[J];電工電氣;2010年09期
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