發(fā)布時(shí)間：2019-05-18 12:55

【摘要】：熔融硅在石墨表面的潤(rùn)濕規(guī)律對(duì)于超薄硅片的橫向拉模制造尤為重要.本文利用COMSOL軟件模擬了理想條件下熔融硅在光滑石墨表面的潤(rùn)濕過(guò)程,并借助高溫高真空接觸角測(cè)量?jī)x對(duì)高溫條件下石墨表面熔融硅的潤(rùn)濕性能開(kāi)展了實(shí)驗(yàn)研究.考察了石墨表面粗糙度(R_a=0.721μm與R_a=0.134μm)、環(huán)境溫度(1737—1744 K)、恒溫持續(xù)時(shí)間(10—30 s)等因素對(duì)潤(rùn)濕角的影響.結(jié)合固-液、氣-液界面的壓力、速度分布圖,分析了恒定溫度、毛細(xì)效應(yīng)下表面張力變化對(duì)潤(rùn)濕過(guò)程的影響機(jī)制.研究結(jié)果表明,相同溫度下,石墨表面硅液滴的潤(rùn)濕角隨石墨表面粗糙度增大而減小.對(duì)同一粗糙度表面,潤(rùn)濕角在相同溫度下隨保溫時(shí)間的增加略微減小,且變化的幅度隨溫度升高而減小.當(dāng)液滴半徑遠(yuǎn)小于5 mm時(shí),表面張力在潤(rùn)濕過(guò)程中起主導(dǎo)作用;當(dāng)液滴半徑大于5 mm時(shí),液滴自身重力的影響不可忽略.
[Abstract]:The wetting law of molten silicon on graphite surface is particularly important for the transverse die drawing of ultra-thin silicon wafer. In this paper, the wetting process of molten silicon on smooth graphite surface under ideal conditions was simulated by COMSOL software, and the wetting properties of molten silicon on graphite surface at high temperature and high vacuum were studied by means of high temperature and high vacuum contact angle measuring instrument. The effects of graphite surface roughness (R 鈮，

本文編號(hào)：2480024