張應變鍺薄膜制備技術的研究進展
發(fā)布時間：2018-12-15 01:15
【摘要】：由于與硅集成電路工藝兼容的張應變鍺薄膜在光電器件如光電探測器、調(diào)制器,特別是發(fā)光器件中具有潛在的應用前景,使其得到了廣泛關注。然而,在鍺薄膜中引入可控的、大的張應變是個挑戰(zhàn)。綜述了張應變鍺薄膜制備技術的研究進展,重點介紹了在鍺薄膜中引入張應變的外延技術、應變轉(zhuǎn)移技術、應變濃縮技術和機械應變技術的工藝流程和實驗結果,并討論了它們的優(yōu)點和缺點。采用應變濃縮技術制備的厚度為350 nm的鍺薄膜微橋的單軸張應變和微盤的雙軸張應變分別達到了4.9%和1.9%,可將鍺調(diào)制為直接帶隙材料,適用于鍺激光器的研制。
[Abstract]:Due to its potential applications in photoelectric devices, such as photodetectors, modulators, especially luminescent devices, tensioned germanium films compatible with silicon integrated circuit technology have attracted wide attention. However, the introduction of controllable, large tensile strain in germanium films is a challenge. The progress in the preparation of strained germanium thin films is reviewed. The process flow and experimental results of introducing tensile strain into germanium thin films, strain transfer technology, strain concentration technology and mechanical strain technology are introduced emphatically. Their advantages and disadvantages are also discussed. The uniaxial strain and biaxial strain of GE thin film microbridge with thickness of 350 nm and biaxial strain of microdisk prepared by strain concentration technique are up to 4.9% and 1.9%, respectively. Germanium can be modulated as a direct bandgap material, which is suitable for the development of germanium laser.
【作者單位】： 深圳信息職業(yè)技術學院電子與通信學院;
【基金】：廣東省高等學校優(yōu)秀青年教師項目(Yq2014123)
【分類號】：TN304.11
本文編號：2379671
[Abstract]:Due to its potential applications in photoelectric devices, such as photodetectors, modulators, especially luminescent devices, tensioned germanium films compatible with silicon integrated circuit technology have attracted wide attention. However, the introduction of controllable, large tensile strain in germanium films is a challenge. The progress in the preparation of strained germanium thin films is reviewed. The process flow and experimental results of introducing tensile strain into germanium thin films, strain transfer technology, strain concentration technology and mechanical strain technology are introduced emphatically. Their advantages and disadvantages are also discussed. The uniaxial strain and biaxial strain of GE thin film microbridge with thickness of 350 nm and biaxial strain of microdisk prepared by strain concentration technique are up to 4.9% and 1.9%, respectively. Germanium can be modulated as a direct bandgap material, which is suitable for the development of germanium laser.
【作者單位】： 深圳信息職業(yè)技術學院電子與通信學院;
【基金】：廣東省高等學校優(yōu)秀青年教師項目(Yq2014123)
【分類號】：TN304.11
【相似文獻】
相關期刊論文 前3條
1 劉坤,季振國;氧化鋅薄膜制備技術的評價[J];真空科學與技術;2002年04期
2 于毅,任天令,劉理天;硅基AlN薄膜制備技術與測試分析[J];半導體學報;2005年01期
3 ;[J];;年期
相關會議論文 前3條
1 周蘭;張淑洋;尹強;肖江;;氘代聚乙烯薄膜制備技術研究[A];第十屆中國核靶技術學術交流會摘要集[C];2009年
2 韓高榮;汪建勛;劉起英;;大面積薄膜制備技術及新型鍍膜玻璃的研究[A];中國真空學會第六屆全國會員代表大會暨學術會議論文摘要集[C];2004年
3 韓高榮;汪建勛;;CVD大面積薄膜制備技術及新型鍍膜玻璃開發(fā)[A];TFC’03全國薄膜技術學術研討會論文摘要集[C];2003年
相關碩士學位論文 前1條
1 劉朋闖;二硼化鋯靶材及薄膜制備技術研究[D];中國工程物理研究院;2012年
，本文編號：2379671
本文鏈接：http://www.wukwdryxk.cn/kejilunwen/dianzigongchenglunwen/2379671.html
教材專著
