基于雙層石墨烯結(jié)構(gòu)的波導型太赫茲調(diào)制器設計
發(fā)布時間：2018-12-23 19:36
【摘要】：隨著太赫茲技術(shù)的迅速發(fā)展,作為太赫茲通信技術(shù)中必不可少的器件,太赫茲調(diào)制器的設計也逐漸得到重視。從最初的探索性實現(xiàn)太赫茲波調(diào)制開始,如今科研人員對太赫茲調(diào)制器的技術(shù)指標要求已經(jīng)是高調(diào)制深度、高調(diào)制速率。本文結(jié)合石墨烯材料,設計并加工了一種基于雙層石墨烯結(jié)構(gòu)的波導型太赫茲調(diào)制器,具有實現(xiàn)高調(diào)制速率和高調(diào)制深度的潛力。石墨烯材料具有非常出色的導電性能和極高的電子遷移率,本文利用此特點設計了硅-石墨烯-絕緣層-石墨烯-硅的五層結(jié)構(gòu),絕緣層是氧化鋁材料。對上下層石墨烯外加電壓,經(jīng)過理論計算可知,外加電壓可改變石墨烯的電導率,影響其介電常數(shù)。太赫茲波以平行于石墨烯表面的方式入射,當外加電壓不同時石墨烯材料的介電常數(shù)也不相同,對于太赫茲波的吸收效果也不同。一般規(guī)律為外加電壓越強,則對太赫茲波的吸收效果也越強。這樣在不同外加電壓下,就實現(xiàn)了對太赫茲波的調(diào)制效果。在實驗測量階段,本文分別采用了太赫茲時域光譜系統(tǒng)和耿氏管系統(tǒng)對加工出的波導型調(diào)制器樣品進行了測量,最終測量得到了最大85%的調(diào)制深度。理論分析,該設計模型理想情況下調(diào)制速率可達500MHz。
[Abstract]:With the rapid development of terahertz technology, the design of terahertz modulator, as an indispensable device in terahertz communication technology, has been paid more and more attention. Since the initial exploratory realization of terahertz wave modulation (THz), the technical requirements of THz modulator are now high modulation depth and high modulation rate. In this paper, a waveguide terahertz modulator based on bilayer graphene structure is designed and fabricated with graphene material. It has the potential to achieve high modulation rate and high modulation depth. Graphene materials have excellent electrical conductivity and high electron mobility. In this paper, the five-layer structure of silicon-graphene insulation-graphene silicon is designed. The insulating layer is alumina material. The theoretical calculation shows that the applied voltage can change the conductivity of graphene and influence its dielectric constant. The terahertz wave is incident in a manner parallel to the graphene surface. When the applied voltage is different, the dielectric constant of the graphene material is different, and the absorption effect of the terahertz wave is also different. The general rule is that the stronger the applied voltage, the stronger the absorption effect of terahertz wave. In this way, the modulation effect of terahertz wave is realized under different applied voltages. In the phase of experimental measurement, THz time-domain spectroscopy system and Gunn's tube system are used to measure the fabricated waveguide modulator samples, and the maximum modulation depth of 85% is obtained. The theoretical analysis shows that the modulation rate of the design model can reach 500 MHz under ideal conditions.
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN761
本文編號：2390165
[Abstract]:With the rapid development of terahertz technology, the design of terahertz modulator, as an indispensable device in terahertz communication technology, has been paid more and more attention. Since the initial exploratory realization of terahertz wave modulation (THz), the technical requirements of THz modulator are now high modulation depth and high modulation rate. In this paper, a waveguide terahertz modulator based on bilayer graphene structure is designed and fabricated with graphene material. It has the potential to achieve high modulation rate and high modulation depth. Graphene materials have excellent electrical conductivity and high electron mobility. In this paper, the five-layer structure of silicon-graphene insulation-graphene silicon is designed. The insulating layer is alumina material. The theoretical calculation shows that the applied voltage can change the conductivity of graphene and influence its dielectric constant. The terahertz wave is incident in a manner parallel to the graphene surface. When the applied voltage is different, the dielectric constant of the graphene material is different, and the absorption effect of the terahertz wave is also different. The general rule is that the stronger the applied voltage, the stronger the absorption effect of terahertz wave. In this way, the modulation effect of terahertz wave is realized under different applied voltages. In the phase of experimental measurement, THz time-domain spectroscopy system and Gunn's tube system are used to measure the fabricated waveguide modulator samples, and the maximum modulation depth of 85% is obtained. The theoretical analysis shows that the modulation rate of the design model can reach 500 MHz under ideal conditions.
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN761
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